Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

P. Sivasubramani; P. D. Kirsch; J. Huang; C. Park; Y. N. Tan; D. C. Gilmer; C. Young; K. Freeman; Muhammad Mustafa Hussain; R. Harris; S. C. Song; D. Heh; R. Choi; Cp Majhi; G. Bersuker; P. Lysaght; B. H. Lee; H. H. Tseng; I. J.S. Jur; D. J. Lichtenwalner; A. I. Kingon; R. Jammy

doi:10.1109/IEDM.2007.4418995

Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

P. Sivasubramani^*, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, K. Freeman, Muhammad Mustafa Hussain, R. Harris, S. C. Song, D. Heh, R. Choi, Cp Majhi, G. Bersuker, P. Lysaght, B. H. Lee, H. H. Tseng, I. J.S. Jur, D. J. LichtenwalnerA. I. Kingon, R. Jammy

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO ₂-containing gate dielectrics achieving an acceptably thin SiO _x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO₂ cap (k=40) on HfSiON. For the first time, an 8% I_on-I_off improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I _on=1300 μA/μm at I_off=100nA/μm for V _dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.

Original language	English (US)
Article number	4418995
Pages (from-to)	543-546
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418995
State	Published - Dec 1 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4418995

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Sivasubramani, P., Kirsch, P. D., Huang, J., Park, C., Tan, Y. N., Gilmer, D. C., Young, C., Freeman, K., Hussain, M. M., Harris, R., Song, S. C., Heh, D., Choi, R., Majhi, C., Bersuker, G., Lysaght, P., Lee, B. H., Tseng, H. H., Jur, I. J. S., ... Jammy, R. (2007). Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond. Technical Digest - International Electron Devices Meeting, IEDM, 543-546. [4418995]. https://doi.org/10.1109/IEDM.2007.4418995

@article{baa80eb2cbd54da6a2f4470bb0980adb,

title = "Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond",

abstract = "We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO 2-containing gate dielectrics achieving an acceptably thin SiO x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO2 cap (k=40) on HfSiON. For the first time, an 8% Ion-Ioff improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I on=1300 μA/μm at Ioff=100nA/μm for V dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.",

author = "P. Sivasubramani and Kirsch, {P. D.} and J. Huang and C. Park and Tan, {Y. N.} and Gilmer, {D. C.} and C. Young and K. Freeman and Hussain, {Muhammad Mustafa} and R. Harris and Song, {S. C.} and D. Heh and R. Choi and Cp Majhi and G. Bersuker and P. Lysaght and Lee, {B. H.} and Tseng, {H. H.} and Jur, {I. J.S.} and Lichtenwalner, {D. J.} and Kingon, {A. I.} and R. Jammy",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/IEDM.2007.4418995",

language = "English (US)",

pages = "543--546",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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Sivasubramani, P, Kirsch, PD, Huang, J, Park, C, Tan, YN, Gilmer, DC, Young, C, Freeman, K, Hussain, MM, Harris, R, Song, SC, Heh, D, Choi, R, Majhi, C, Bersuker, G, Lysaght, P, Lee, BH, Tseng, HH, Jur, IJS, Lichtenwalner, DJ, Kingon, AI & Jammy, R 2007, 'Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond', Technical Digest - International Electron Devices Meeting, IEDM, pp. 543-546. https://doi.org/10.1109/IEDM.2007.4418995

TY - JOUR

T1 - Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

AU - Sivasubramani, P.

AU - Kirsch, P. D.

AU - Huang, J.

AU - Park, C.

AU - Tan, Y. N.

AU - Gilmer, D. C.

AU - Young, C.

AU - Freeman, K.

AU - Hussain, Muhammad Mustafa

AU - Harris, R.

AU - Song, S. C.

AU - Heh, D.

AU - Choi, R.

AU - Majhi, Cp

AU - Bersuker, G.

AU - Lysaght, P.

AU - Lee, B. H.

AU - Tseng, H. H.

AU - Jur, I. J.S.

AU - Lichtenwalner, D. J.

AU - Kingon, A. I.

AU - Jammy, R.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO 2-containing gate dielectrics achieving an acceptably thin SiO x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO2 cap (k=40) on HfSiON. For the first time, an 8% Ion-Ioff improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I on=1300 μA/μm at Ioff=100nA/μm for V dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.

AB - We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO 2-containing gate dielectrics achieving an acceptably thin SiO x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO2 cap (k=40) on HfSiON. For the first time, an 8% Ion-Ioff improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I on=1300 μA/μm at Ioff=100nA/μm for V dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.

UR - http://www.scopus.com/inward/record.url?scp=50249184597&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2007.4418995

DO - 10.1109/IEDM.2007.4418995

M3 - Conference article

AN - SCOPUS:50249184597

SN - 0163-1918

SP - 543

EP - 546

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

M1 - 4418995

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

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