Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

P. Sivasubramani; P. D. Kirsch; J. Huang; C. Park; Y. N. Tan; D. C. Gilmer; C. Young; K. Freeman; M. M. Hussain; R. Harris; S. C. Song; D. Heh; R. Choi; Cp Majhi; G. Bersuker; P. Lysaght; B. H. Lee; H. H. Tseng; I. J.S. Jur; D. J. Lichtenwalner; A. I. Kingon; R. Jammy

doi:10.1109/IEDM.2007.4418995

Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

P. Sivasubramani^*, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, K. Freeman, M. M. Hussain, R. Harris, S. C. Song, D. Heh, R. Choi, Cp Majhi, G. Bersuker, P. Lysaght, B. H. Lee, H. H. Tseng, I. J.S. Jur, D. J. LichtenwalnerA. I. Kingon, R. Jammy

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO ₂-containing gate dielectrics achieving an acceptably thin SiO _x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO₂ cap (k=40) on HfSiON. For the first time, an 8% I_on-I_off improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I _on=1300 μA/μm at I_off=100nA/μm for V _dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.

Original language	English (US)
Article number	4418995
Pages (from-to)	543-546
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418995
State	Published - 2007
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4418995

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Sivasubramani, P., Kirsch, P. D., Huang, J., Park, C., Tan, Y. N., Gilmer, D. C., Young, C., Freeman, K., Hussain, M. M., Harris, R., Song, S. C., Heh, D., Choi, R., Majhi, C., Bersuker, G., Lysaght, P., Lee, B. H., Tseng, H. H., Jur, I. J. S., ... Jammy, R. (2007). Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond. Technical Digest - International Electron Devices Meeting, IEDM, 543-546. Article 4418995. https://doi.org/10.1109/IEDM.2007.4418995

@article{baa80eb2cbd54da6a2f4470bb0980adb,

title = "Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond",

abstract = "We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO 2-containing gate dielectrics achieving an acceptably thin SiO x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO2 cap (k=40) on HfSiON. For the first time, an 8% Ion-Ioff improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I on=1300 μA/μm at Ioff=100nA/μm for V dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.",

author = "P. Sivasubramani and Kirsch, {P. D.} and J. Huang and C. Park and Tan, {Y. N.} and Gilmer, {D. C.} and C. Young and K. Freeman and Hussain, {M. M.} and R. Harris and Song, {S. C.} and D. Heh and R. Choi and Cp Majhi and G. Bersuker and P. Lysaght and Lee, {B. H.} and Tseng, {H. H.} and Jur, {I. J.S.} and Lichtenwalner, {D. J.} and Kingon, {A. I.} and R. Jammy",

year = "2007",

doi = "10.1109/IEDM.2007.4418995",

language = "English (US)",

pages = "543--546",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

}

Sivasubramani, P, Kirsch, PD, Huang, J, Park, C, Tan, YN, Gilmer, DC, Young, C, Freeman, K, Hussain, MM, Harris, R, Song, SC, Heh, D, Choi, R, Majhi, C, Bersuker, G, Lysaght, P, Lee, BH, Tseng, HH, Jur, IJS, Lichtenwalner, DJ, Kingon, AI & Jammy, R 2007, 'Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond', Technical Digest - International Electron Devices Meeting, IEDM, pp. 543-546. https://doi.org/10.1109/IEDM.2007.4418995

TY - JOUR

T1 - Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

AU - Sivasubramani, P.

AU - Kirsch, P. D.

AU - Huang, J.

AU - Park, C.

AU - Tan, Y. N.

AU - Gilmer, D. C.

AU - Young, C.

AU - Freeman, K.

AU - Hussain, M. M.

AU - Harris, R.

AU - Song, S. C.

AU - Heh, D.

AU - Choi, R.

AU - Majhi, Cp

AU - Bersuker, G.

AU - Lysaght, P.

AU - Lee, B. H.

AU - Tseng, H. H.

AU - Jur, I. J.S.

AU - Lichtenwalner, D. J.

AU - Kingon, A. I.

AU - Jammy, R.

PY - 2007

Y1 - 2007

N2 - We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO 2-containing gate dielectrics achieving an acceptably thin SiO x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO2 cap (k=40) on HfSiON. For the first time, an 8% Ion-Ioff improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I on=1300 μA/μm at Ioff=100nA/μm for V dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.

AB - We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32nm node capable of low equivalent oxide thickness (EOT=0.84nm). For the first time, we have addressed the thermodynamic instability of TiO 2-containing gate dielectrics achieving an acceptably thin SiO x interface (0.7nm) after 1070°C. 3-lOx leakage current reduction is achieved with HfTiSiON vs. HfSiON due to a higher-k TiO2 cap (k=40) on HfSiON. For the first time, an 8% Ion-Ioff improvement of HfTiSiON vs. HfSiON is demonstrated. HfTiSiON shows I on=1300 μA/μm at Ioff=100nA/μm for V dd= 1.2V without stress engineering. HfTiSiON shows bias temperature instability (PBTI) and time dependent dielectric breakdown (TDDB) similar to HfSiON. This work is significant because it demonstrates higher-k scaling benefit and extension of high-k beyond Hf-oxides for sub-32nm technologies.

UR - http://www.scopus.com/inward/record.url?scp=50249184597&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2007.4418995

DO - 10.1109/IEDM.2007.4418995

M3 - Conference article

AN - SCOPUS:50249184597

SN - 0163-1918

SP - 543

EP - 546

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4418995

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

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