Air-stable ambipolar organic transistors

Thomas D. Anthopoulos; G. C. Anyfantis; G. C. Papavassiliou; Dago M. De Leeuw

doi:10.1063/1.2715028

Air-stable ambipolar organic transistors

Thomas D. Anthopoulos^*, G. C. Anyfantis, G. C. Papavassiliou, Dago M. De Leeuw

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

190 Scopus citations

Abstract

The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5- dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10-4 cm2 V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/ n -channel molecules.

Original language	English (US)
Article number	122105
Journal	Applied Physics Letters
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.2715028
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2715028

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title = "Air-stable ambipolar organic transistors",

abstract = "The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5- dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10-4 cm2 V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/ n -channel molecules.",

author = "Anthopoulos, {Thomas D.} and Anyfantis, {G. C.} and Papavassiliou, {G. C.} and {De Leeuw}, {Dago M.}",

note = "Funding Information: The authors are grateful to the Engineering and Physical Sciences Research Council (EPSRC) for financial support. One of the authors (T.D.A.) is an EPSRC Advanced Research Fellow. Two of the authors (G.C.A. and G.C.P.) acknowledge support from GSRT-Ministry of Development in Greece through the Excellence in the Research Institutes Grant No. 0684.",

year = "2007",

doi = "10.1063/1.2715028",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "12",

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T1 - Air-stable ambipolar organic transistors

AU - Anthopoulos, Thomas D.

AU - Anyfantis, G. C.

AU - Papavassiliou, G. C.

AU - De Leeuw, Dago M.

N1 - Funding Information: The authors are grateful to the Engineering and Physical Sciences Research Council (EPSRC) for financial support. One of the authors (T.D.A.) is an EPSRC Advanced Research Fellow. Two of the authors (G.C.A. and G.C.P.) acknowledge support from GSRT-Ministry of Development in Greece through the Excellence in the Research Institutes Grant No. 0684.

PY - 2007

Y1 - 2007

N2 - The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5- dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10-4 cm2 V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/ n -channel molecules.

AB - The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5- dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10-4 cm2 V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/ n -channel molecules.

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U2 - 10.1063/1.2715028

DO - 10.1063/1.2715028

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122105

ER -

Air-stable ambipolar organic transistors

Abstract

ASJC Scopus subject areas

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