Abstract
The dynamic operation of integrated complementary-like circuits based on solution-processes ambipolar transistors was studied. A soluble, near-infrared-absorbing dye bis(4-dimethylaminodithiobenzyl)nickel (nickel dithiolene) was employed as an organic semiconductor. Cyclic voltametry measurements in solution revealed that the bandgap of the nickel dithiolene was on the order of 0.9 eV with the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) at 5.2 and 4.3 eV, respectively. Nickel dithiolene transistors were also been fabricated on flexible polymer substrates using a photoimageable polymer gate dielectric and gold source/drain electrodes under ambient conditions. The circuits are found to be stable in air and light, and capable of operating without any encapsulation even after exposure to ambient air for several months.
Original language | English (US) |
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Pages (from-to) | 1900-1904 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 18 |
Issue number | 14 |
DOIs | |
State | Published - Jul 18 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science