Air stable high resolution organic transistors by selective laser sintering of ink-jet printed metal nanoparticles

Seung H. Ko; Heng Pan; Costas P. Grigoropoulos; Christine K. Luscombe; Jean M. J. Frechet; Dimos Poulikakos

doi:10.1063/1.2719162

Air stable high resolution organic transistors by selective laser sintering of ink-jet printed metal nanoparticles

Seung H. Ko^*, Heng Pan, Costas P. Grigoropoulos, Christine K. Luscombe, Jean M. J. Frechet, Dimos Poulikakos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

204 Scopus citations

Abstract

A high resolution organic field effect transistor (OFET) fabrication process has been developed based on the selective laser sintering of ink-jet printed nanoparticle inks and the recent development of an air stable carboxylate-functionalized polythiophene semiconducting polymer. The entire fabrication and device characterization are performed at room temperature, ambient pressure, and air environment without using complex lithographic methods. This low temperature OFET fabrication process based on nanoparticle laser sintering has great potential for realizing inexpensive, large area flexible electronics on heat sensitive polymer substrates.

Original language	English
Article number	141103
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	14
DOIs	https://doi.org/10.1063/1.2719162
State	Published - Apr 2 2007
Externally published	Yes

Keywords

GOLD
TEMPERATURE
PERFORMANCE
CIRCUITS

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10.1063/1.2719162

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title = "Air stable high resolution organic transistors by selective laser sintering of ink-jet printed metal nanoparticles",

abstract = "A high resolution organic field effect transistor (OFET) fabrication process has been developed based on the selective laser sintering of ink-jet printed nanoparticle inks and the recent development of an air stable carboxylate-functionalized polythiophene semiconducting polymer. The entire fabrication and device characterization are performed at room temperature, ambient pressure, and air environment without using complex lithographic methods. This low temperature OFET fabrication process based on nanoparticle laser sintering has great potential for realizing inexpensive, large area flexible electronics on heat sensitive polymer substrates.",

keywords = "GOLD, TEMPERATURE, PERFORMANCE, CIRCUITS",

author = "Ko, {Seung H.} and Heng Pan and Grigoropoulos, {Costas P.} and Luscombe, {Christine K.} and Frechet, {Jean M. J.} and Dimos Poulikakos",

year = "2007",

month = apr,

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doi = "10.1063/1.2719162",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

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AU - Ko, Seung H.

AU - Pan, Heng

AU - Grigoropoulos, Costas P.

AU - Luscombe, Christine K.

AU - Frechet, Jean M. J.

AU - Poulikakos, Dimos

PY - 2007/4/2

Y1 - 2007/4/2

N2 - A high resolution organic field effect transistor (OFET) fabrication process has been developed based on the selective laser sintering of ink-jet printed nanoparticle inks and the recent development of an air stable carboxylate-functionalized polythiophene semiconducting polymer. The entire fabrication and device characterization are performed at room temperature, ambient pressure, and air environment without using complex lithographic methods. This low temperature OFET fabrication process based on nanoparticle laser sintering has great potential for realizing inexpensive, large area flexible electronics on heat sensitive polymer substrates.

AB - A high resolution organic field effect transistor (OFET) fabrication process has been developed based on the selective laser sintering of ink-jet printed nanoparticle inks and the recent development of an air stable carboxylate-functionalized polythiophene semiconducting polymer. The entire fabrication and device characterization are performed at room temperature, ambient pressure, and air environment without using complex lithographic methods. This low temperature OFET fabrication process based on nanoparticle laser sintering has great potential for realizing inexpensive, large area flexible electronics on heat sensitive polymer substrates.

KW - GOLD

KW - TEMPERATURE

KW - PERFORMANCE

KW - CIRCUITS

U2 - 10.1063/1.2719162

DO - 10.1063/1.2719162

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141103

ER -

Air stable high resolution organic transistors by selective laser sintering of ink-jet printed metal nanoparticles

Abstract

Keywords

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