Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2v-1 s-1

Jeremy Smith; Aneeqa Bashir; George Adamopoulos; John E. Anthony; Donal D.C. Bradley; R. Hamilton; Martin Heeney; Iain McCulloch; Thomas D. Anthopoulos

doi:10.1002/adma.201000195

Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2v-1 s-1

Jeremy Smith, Aneeqa Bashir, George Adamopoulos, John E. Anthony, Donal D.C. Bradley, R. Hamilton, Martin Heeney, Iain McCulloch, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Figure Presented An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	3598-3602
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	32
DOIs	https://doi.org/10.1002/adma.201000195
State	Published - Aug 24 2010
Externally published	Yes

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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AU - Smith, Jeremy

AU - Bashir, Aneeqa

AU - Adamopoulos, George

AU - Anthony, John E.

AU - Bradley, Donal D.C.

AU - Hamilton, R.

AU - Heeney, Martin

AU - McCulloch, Iain

AU - Anthopoulos, Thomas D.

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AB - Figure Presented An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2v-1 s-1

Abstract

ASJC Scopus subject areas

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