ALD of advanced high-k and metal gate stacks for MOS devices

James Gutt; Sundar Gopalan; George A. Brown; Paul D. Kirsch; Jeff J. Peterson; Mark I. Gardner; Hong Jyh Li; Patrick Lysaght; Husam N. Alshareef; Kisik Choi; Craig Huffinan; Huang Chun Wen; Prashant Majhi; Byoung Hun Lee; Hood Chatham; Seung Park; Sidi Lanee; Lawrence Bartholomew; Yoshihide Senzaki

ALD of advanced high-k and metal gate stacks for MOS devices

James Gutt, Sundar Gopalan, George A. Brown, Paul D. Kirsch, Jeff J. Peterson, Mark I. Gardner, Hong Jyh Li, Patrick Lysaght, Husam N. Alshareef, Kisik Choi, Craig Huffinan, Huang Chun Wen, Prashant Majhi, Byoung Hun Lee, Hood Chatham, Seung Park, Sidi Lanee, Lawrence Bartholomew, Yoshihide Senzaki^*

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Atomic layer deposition (ALD) processes for HfO ₂ and Hf _xSi _(1-x)O high-k dielectric thin films were demonstrated to provide equivalent oxide thickness (EOT) as low as 7.7Å while maintaining acceptable gate leakage levels. Hafnium silicate films were deposited by "co-injection ALD" using mixed vapors of tetrakis(ethyhnethylamino)hamium (TEMAHf) and tetrakis(ethylmethylamino)silicon (TEMASi), with alternating pulses of Os as an oxidant. Dielectric properties of these films demonstrated the capability to provide high-k dielectric layers for 65nm node and beyond. The co-injection ALD technique was further extended to grow HfSiON in-situ at temperatures below 400°C. This novel sequential thermal process demonstrated nitrogen incorporation up to 15 atomic % in the HfSiON films by XPS analysis. Several ALD metal nitrides were prepared for metal gate applications for the high-k dielectrics. The effective work function of some of these materials, derived from MOSCAPs, were 4.5∼4.6 eV for 10 nm TiN, ∼4.4 eV for 15 nm HfN, and 4.4∼4.5 eV for 15 nm HfSiN.

Original language	English (US)
Pages	282-292
Number of pages	11
State	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	05/16/05 → 05/20/05

ASJC Scopus subject areas

General Engineering

Cite this

Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M. I., Li, H. J., Lysaght, P., Alshareef, H. N., Choi, K., Huffinan, C., Wen, H. C., Majhi, P., Lee, B. H., Chatham, H., Park, S., Lanee, S., Bartholomew, L., & Senzaki, Y. (2005). ALD of advanced high-k and metal gate stacks for MOS devices. 282-292. Paper presented at 207th ECS Meeting, Quebec, Canada.

@conference{859fe512d3d1450780e7a626ade57fc7,

title = "ALD of advanced high-k and metal gate stacks for MOS devices",

abstract = "Atomic layer deposition (ALD) processes for HfO 2 and Hf xSi (1-x)O high-k dielectric thin films were demonstrated to provide equivalent oxide thickness (EOT) as low as 7.7{\AA} while maintaining acceptable gate leakage levels. Hafnium silicate films were deposited by {"}co-injection ALD{"} using mixed vapors of tetrakis(ethyhnethylamino)hamium (TEMAHf) and tetrakis(ethylmethylamino)silicon (TEMASi), with alternating pulses of Os as an oxidant. Dielectric properties of these films demonstrated the capability to provide high-k dielectric layers for 65nm node and beyond. The co-injection ALD technique was further extended to grow HfSiON in-situ at temperatures below 400°C. This novel sequential thermal process demonstrated nitrogen incorporation up to 15 atomic % in the HfSiON films by XPS analysis. Several ALD metal nitrides were prepared for metal gate applications for the high-k dielectrics. The effective work function of some of these materials, derived from MOSCAPs, were 4.5∼4.6 eV for 10 nm TiN, ∼4.4 eV for 15 nm HfN, and 4.4∼4.5 eV for 15 nm HfSiN.",

author = "James Gutt and Sundar Gopalan and Brown, {George A.} and Kirsch, {Paul D.} and Peterson, {Jeff J.} and Gardner, {Mark I.} and Li, {Hong Jyh} and Patrick Lysaght and Alshareef, {Husam N.} and Kisik Choi and Craig Huffinan and Wen, {Huang Chun} and Prashant Majhi and Lee, {Byoung Hun} and Hood Chatham and Seung Park and Sidi Lanee and Lawrence Bartholomew and Yoshihide Senzaki",

year = "2005",

language = "English (US)",

pages = "282--292",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

Gutt, J, Gopalan, S, Brown, GA, Kirsch, PD, Peterson, JJ, Gardner, MI, Li, HJ, Lysaght, P, Alshareef, HN, Choi, K, Huffinan, C, Wen, HC, Majhi, P, Lee, BH, Chatham, H, Park, S, Lanee, S, Bartholomew, L & Senzaki, Y 2005, 'ALD of advanced high-k and metal gate stacks for MOS devices', Paper presented at 207th ECS Meeting, Quebec, Canada, 05/16/05 - 05/20/05 pp. 282-292.

TY - CONF

T1 - ALD of advanced high-k and metal gate stacks for MOS devices

AU - Gutt, James

AU - Gopalan, Sundar

AU - Brown, George A.

AU - Kirsch, Paul D.

AU - Peterson, Jeff J.

AU - Gardner, Mark I.

AU - Li, Hong Jyh

AU - Lysaght, Patrick

AU - Alshareef, Husam N.

AU - Choi, Kisik

AU - Huffinan, Craig

AU - Wen, Huang Chun

AU - Majhi, Prashant

AU - Lee, Byoung Hun

AU - Chatham, Hood

AU - Park, Seung

AU - Lanee, Sidi

AU - Bartholomew, Lawrence

AU - Senzaki, Yoshihide

PY - 2005

Y1 - 2005

N2 - Atomic layer deposition (ALD) processes for HfO 2 and Hf xSi (1-x)O high-k dielectric thin films were demonstrated to provide equivalent oxide thickness (EOT) as low as 7.7Å while maintaining acceptable gate leakage levels. Hafnium silicate films were deposited by "co-injection ALD" using mixed vapors of tetrakis(ethyhnethylamino)hamium (TEMAHf) and tetrakis(ethylmethylamino)silicon (TEMASi), with alternating pulses of Os as an oxidant. Dielectric properties of these films demonstrated the capability to provide high-k dielectric layers for 65nm node and beyond. The co-injection ALD technique was further extended to grow HfSiON in-situ at temperatures below 400°C. This novel sequential thermal process demonstrated nitrogen incorporation up to 15 atomic % in the HfSiON films by XPS analysis. Several ALD metal nitrides were prepared for metal gate applications for the high-k dielectrics. The effective work function of some of these materials, derived from MOSCAPs, were 4.5∼4.6 eV for 10 nm TiN, ∼4.4 eV for 15 nm HfN, and 4.4∼4.5 eV for 15 nm HfSiN.

AB - Atomic layer deposition (ALD) processes for HfO 2 and Hf xSi (1-x)O high-k dielectric thin films were demonstrated to provide equivalent oxide thickness (EOT) as low as 7.7Å while maintaining acceptable gate leakage levels. Hafnium silicate films were deposited by "co-injection ALD" using mixed vapors of tetrakis(ethyhnethylamino)hamium (TEMAHf) and tetrakis(ethylmethylamino)silicon (TEMASi), with alternating pulses of Os as an oxidant. Dielectric properties of these films demonstrated the capability to provide high-k dielectric layers for 65nm node and beyond. The co-injection ALD technique was further extended to grow HfSiON in-situ at temperatures below 400°C. This novel sequential thermal process demonstrated nitrogen incorporation up to 15 atomic % in the HfSiON films by XPS analysis. Several ALD metal nitrides were prepared for metal gate applications for the high-k dielectrics. The effective work function of some of these materials, derived from MOSCAPs, were 4.5∼4.6 eV for 10 nm TiN, ∼4.4 eV for 15 nm HfN, and 4.4∼4.5 eV for 15 nm HfSiN.

UR - http://www.scopus.com/inward/record.url?scp=31844444731&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844444731

SP - 282

EP - 292

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

ALD of advanced high-k and metal gate stacks for MOS devices

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