ALD of advanced high-k and metal gate stacks for MOS devices

James Gutt, Sundar Gopalan, George A. Brown, Paul D. Kirsch, Jeff J. Peterson, Mark I. Gardner, Hong Jyh Li, Patrick Lysaght, Husam N. Alshareef, Kisik Choi, Craig Huffinan, Huang Chun Wen, Prashant Majhi, Byoung Hun Lee, Hood Chatham, Seung Park, Sidi Lanee, Lawrence Bartholomew, Yoshihide Senzaki*

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review


Atomic layer deposition (ALD) processes for HfO 2 and Hf xSi (1-x)O high-k dielectric thin films were demonstrated to provide equivalent oxide thickness (EOT) as low as 7.7Å while maintaining acceptable gate leakage levels. Hafnium silicate films were deposited by "co-injection ALD" using mixed vapors of tetrakis(ethyhnethylamino)hamium (TEMAHf) and tetrakis(ethylmethylamino)silicon (TEMASi), with alternating pulses of Os as an oxidant. Dielectric properties of these films demonstrated the capability to provide high-k dielectric layers for 65nm node and beyond. The co-injection ALD technique was further extended to grow HfSiON in-situ at temperatures below 400°C. This novel sequential thermal process demonstrated nitrogen incorporation up to 15 atomic % in the HfSiON films by XPS analysis. Several ALD metal nitrides were prepared for metal gate applications for the high-k dielectrics. The effective work function of some of these materials, derived from MOSCAPs, were 4.5∼4.6 eV for 10 nm TiN, ∼4.4 eV for 15 nm HfN, and 4.4∼4.5 eV for 15 nm HfSiN.

Original languageEnglish (US)
Number of pages11
StatePublished - 2005
Externally publishedYes
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005


Other207th ECS Meeting

ASJC Scopus subject areas

  • General Engineering


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