AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

Jianchang Yan; Junxi Wang; Yun Zhang; Peipei Cong; Lili Sun; Yingdong Tian; Chao Zhao; Jinmin Li

doi:10.1016/j.jcrysgro.2014.10.015

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

Jianchang Yan, Junxi Wang, Yun Zhang, Peipei Cong, Lili Sun, Yingdong Tian, Chao Zhao, Jinmin Li

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

Original language	English (US)
Pages (from-to)	254-257
Number of pages	4
Journal	Journal of Crystal Growth
Volume	414
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.10.015
State	Published - Mar 2015

ASJC Scopus subject areas

Materials Chemistry
Inorganic Chemistry
Condensed Matter Physics

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10.1016/j.jcrysgro.2014.10.015

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@article{81412f6075c644d8a9426a2db7de6845,

title = "AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE",

abstract = "In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.",

author = "Jianchang Yan and Junxi Wang and Yun Zhang and Peipei Cong and Lili Sun and Yingdong Tian and Chao Zhao and Jinmin Li",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61376047, 61376090, 61204053 and 51102226, by the National High Technology Program of China under Grant No. 2014AA032608 and 2011AA03A111, by the National Basic Research Program of China No. 2012CB619306, and the National 1000 Young Talents Program.",

year = "2015",

month = mar,

doi = "10.1016/j.jcrysgro.2014.10.015",

language = "English (US)",

volume = "414",

pages = "254--257",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

AU - Yan, Jianchang

AU - Wang, Junxi

AU - Zhang, Yun

AU - Cong, Peipei

AU - Sun, Lili

AU - Tian, Yingdong

AU - Zhao, Chao

AU - Li, Jinmin

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61376047, 61376090, 61204053 and 51102226, by the National High Technology Program of China under Grant No. 2014AA032608 and 2011AA03A111, by the National Basic Research Program of China No. 2012CB619306, and the National 1000 Young Talents Program.

PY - 2015/3

Y1 - 2015/3

N2 - In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AB - In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

UR - http://hdl.handle.net/10754/564088

UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024814007003

UR - http://www.scopus.com/inward/record.url?scp=84922553314&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.10.015

DO - 10.1016/j.jcrysgro.2014.10.015

M3 - Article

SN - 0022-0248

VL - 414

SP - 254

EP - 257

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

Abstract

ASJC Scopus subject areas

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