Abstract
We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10 13 cm -2 at an InN molar fraction of 0.60. The Al 0.30Ga 0.70N/Ga 0.40In 0.60N heterostructure exhibited static field-effect transistor (FET) characteristics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original language | English (US) |
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Pages (from-to) | 1614-1616 |
Number of pages | 3 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 208 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1 2011 |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Condensed Matter Physics