Abstract
Vertically aligned Er-doped ZnO nanorod arrays with sharp and intense 1.54 μm infrared emission have been fabricated on Si substrates through a well controlled spin-coating and annealing process. The synthesis method is advantageous for synthesizing ZnO nanostructures free from structural defects, capability for large-scale production, minimum equipment requirement and product homogeneity. Er atoms were found to incorporate into ZnO lattice from XRD, ESCA, TEM, STEM/EDS and PL measurements. The single-crystal Er-doped nanorods maintained their high microstructural quality after annealing for 4 hr at 800°C. The intensity of 1.54 μm infrared emission was found to be correlated with the deep level green emission. The enhanced luminescence intensity and best ever narrow wavelength distribution of Er-doped ZnO nanorod arrays at 1.54 μm emission will be conductive to applications in optoelectronic devices and optical communications.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3363-3368 |
| Number of pages | 6 |
| Journal | Journal of nanoscience and nanotechnology |
| Volume | 8 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2008 |
| Externally published | Yes |
Keywords
- Er-doped ZnO
- Infrared emission
- Nanorod arrays
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics