TY - JOUR
T1 - Alkylated selenophene-based ladder-type monomers via a facile route for high performance thin-film transistor applications
AU - Fei, Zhuping
AU - Han, Yang
AU - Gann, Eliot
AU - Hodsden, Thomas
AU - Chesman, Anthony
AU - McNeill, Christopher R.
AU - Anthopoulos, Thomas D.
AU - Heeney, Martin
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank the British Council (Grant Number 173601536) and EPSRC (EP/L016702/1) for support. C.R.M. acknowledges support from the Australian Research Council (DP130102616). This research was undertaken in part on the SAXS/WAXS beamline at the Australian Synchrotron, Victoria, Australia.
PY - 2017/6/15
Y1 - 2017/6/15
N2 - We report the synthesis of two new selenophene containing ladder-type monomers, cyclopentadiselenophene (CDS) and indacenodiselenophene (IDSe), via a twofold and fourfold Pd catalyzed coupling with a 1,1-diborylmethane derivative. Co-polymers with benzothiadiazole (BT) were prepared in high yield by Suzuki polymerization to afford co-polymers which exhibited excellent solubility in a range of non-chlorinated solvents. The CDS co-polymer exhibited a band gap of just 1.18 eV, which is amongst the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, non-chlorinated solvents with the CDS and IDSe co-polymers exhibiting hole mobility up to 0.15 and 6.4 cm2 /Vs, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.
AB - We report the synthesis of two new selenophene containing ladder-type monomers, cyclopentadiselenophene (CDS) and indacenodiselenophene (IDSe), via a twofold and fourfold Pd catalyzed coupling with a 1,1-diborylmethane derivative. Co-polymers with benzothiadiazole (BT) were prepared in high yield by Suzuki polymerization to afford co-polymers which exhibited excellent solubility in a range of non-chlorinated solvents. The CDS co-polymer exhibited a band gap of just 1.18 eV, which is amongst the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, non-chlorinated solvents with the CDS and IDSe co-polymers exhibiting hole mobility up to 0.15 and 6.4 cm2 /Vs, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.
UR - http://hdl.handle.net/10754/623756
UR - http://pubs.acs.org/doi/abs/10.1021/jacs.7b03099
UR - http://www.scopus.com/inward/record.url?scp=85021641494&partnerID=8YFLogxK
U2 - 10.1021/jacs.7b03099
DO - 10.1021/jacs.7b03099
M3 - Article
C2 - 28548496
SN - 0002-7863
VL - 139
SP - 8552
EP - 8561
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 25
ER -