All MOVPE grown nitride-based LED having sub mm underlying GaN

Y. Tanaka; J. Ando; D. Iida; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1002/pssc.200779275

All MOVPE grown nitride-based LED having sub mm underlying GaN

Y. Tanaka, J. Ando, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

High-quality GaN layers with thickness exceeding 100 μm were successfully grown by metalorganic vapor phase epitaxy (MOVPE) by controlling the V/III ratio during growth. The surface morphology of the thick GaN layer was found to be affected by the reactor pressure. The formation of voids during the growth of GaN on a patterned GaN/sapphire template is very effective in promoting fast etching of GaN from underneath, thereby achieving free-standing GaN. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English (US)
Title of host publication	Physica Status Solidi (C) Current Topics in Solid State Physics
Pages	3073-3075
Number of pages	3
DOIs	https://doi.org/10.1002/pssc.200779275
State	Published - Dec 1 2008
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200779275

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title = "All MOVPE grown nitride-based LED having sub mm underlying GaN",

abstract = "High-quality GaN layers with thickness exceeding 100 μm were successfully grown by metalorganic vapor phase epitaxy (MOVPE) by controlling the V/III ratio during growth. The surface morphology of the thick GaN layer was found to be affected by the reactor pressure. The formation of voids during the growth of GaN on a patterned GaN/sapphire template is very effective in promoting fast etching of GaN from underneath, thereby achieving free-standing GaN. {\textcopyright} 2008 Wiley-VCH Verlag GmbH & Co. KGaA.",

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AU - Tanaka, Y.

AU - Ando, J.

AU - Iida, D.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

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Y1 - 2008/12/1

N2 - High-quality GaN layers with thickness exceeding 100 μm were successfully grown by metalorganic vapor phase epitaxy (MOVPE) by controlling the V/III ratio during growth. The surface morphology of the thick GaN layer was found to be affected by the reactor pressure. The formation of voids during the growth of GaN on a patterned GaN/sapphire template is very effective in promoting fast etching of GaN from underneath, thereby achieving free-standing GaN. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - High-quality GaN layers with thickness exceeding 100 μm were successfully grown by metalorganic vapor phase epitaxy (MOVPE) by controlling the V/III ratio during growth. The surface morphology of the thick GaN layer was found to be affected by the reactor pressure. The formation of voids during the growth of GaN on a patterned GaN/sapphire template is very effective in promoting fast etching of GaN from underneath, thereby achieving free-standing GaN. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

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DO - 10.1002/pssc.200779275

M3 - Conference contribution

SP - 3073

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BT - Physica Status Solidi (C) Current Topics in Solid State Physics

ER -

All MOVPE grown nitride-based LED having sub mm underlying GaN

Abstract

ASJC Scopus subject areas

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