TY - JOUR
T1 - All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends
AU - Khan, Yasser
AU - Bhansali, Unnat Sampatraj
AU - Cha, Dong Kyu
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015. The authors also acknowledge Mrs. Supriya Chewle for her help with artistic rendering of the images.
PY - 2012/11/21
Y1 - 2012/11/21
N2 - All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - http://hdl.handle.net/10754/562420
UR - http://doi.wiley.com/10.1002/adfm.201202724
UR - http://www.scopus.com/inward/record.url?scp=84877294382&partnerID=8YFLogxK
U2 - 10.1002/adfm.201202724
DO - 10.1002/adfm.201202724
M3 - Article
SN - 1616-301X
VL - 23
SP - 2145
EP - 2152
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 17
ER -