All-Quantum-Dot Infrared Light-Emitting Diodes

Zhenyu Yang, Oleksandr Voznyy, Mengxia Liu, Mingjian Yuan, Alexander H. Ip, Osman S. Ahmed, Larissa Levina, Sachin Kinge, Sjoerd Hoogland, Edward H. Sargent

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.
Original languageEnglish (US)
Pages (from-to)12327-12333
Number of pages7
JournalACS Nano
Issue number12
StatePublished - Nov 20 2015
Externally publishedYes


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