Ambipolar organic field-effect transistors based on a solution-processed methanofullerene

Thomas D. Anthopoulos; Cristina Tanase; Sepas Setayesh; Eduard J. Meijer; Jan C. Hummelen; Paul W.M. Blom; Dago M. De Leeuw

doi:10.1002/adma.200400309

Ambipolar organic field-effect transistors based on a solution-processed methanofullerene

Thomas D. Anthopoulos^*, Cristina Tanase, Sepas Setayesh, Eduard J. Meijer, Jan C. Hummelen, Paul W.M. Blom, Dago M. De Leeuw

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

232 Scopus citations

Abstract

The effect of channel resistance (R_C) on the effective channel resistance (R_CH) in organic field effect transistors was investigated. It was observed that for high gate voltage, the transistors operated in electron-enhancement mode and their performance was similar to a unipolar n-type transistor. It was also observed that at drain voltage of less than +2V an injection barrier existed which contributed to contact resistance. The analysis support printed circuit board drill analyzing microscope (PCBM) for application in organic complmentary-like technology.

Original language	English (US)
Pages (from-to)	2174-2179
Number of pages	6
Journal	Advanced Materials
Volume	16
Issue number	23-24
DOIs	https://doi.org/10.1002/adma.200400309
State	Published - Dec 27 2004
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Ambipolar organic field-effect transistors based on a solution-processed methanofullerene",

abstract = "The effect of channel resistance (RC) on the effective channel resistance (RCH) in organic field effect transistors was investigated. It was observed that for high gate voltage, the transistors operated in electron-enhancement mode and their performance was similar to a unipolar n-type transistor. It was also observed that at drain voltage of less than +2V an injection barrier existed which contributed to contact resistance. The analysis support printed circuit board drill analyzing microscope (PCBM) for application in organic complmentary-like technology.",

author = "Anthopoulos, {Thomas D.} and Cristina Tanase and Sepas Setayesh and Meijer, {Eduard J.} and Hummelen, {Jan C.} and Blom, {Paul W.M.} and {De Leeuw}, {Dago M.}",

year = "2004",

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AU - Anthopoulos, Thomas D.

AU - Tanase, Cristina

AU - Setayesh, Sepas

AU - Meijer, Eduard J.

AU - Hummelen, Jan C.

AU - Blom, Paul W.M.

AU - De Leeuw, Dago M.

PY - 2004/12/27

Y1 - 2004/12/27

N2 - The effect of channel resistance (RC) on the effective channel resistance (RCH) in organic field effect transistors was investigated. It was observed that for high gate voltage, the transistors operated in electron-enhancement mode and their performance was similar to a unipolar n-type transistor. It was also observed that at drain voltage of less than +2V an injection barrier existed which contributed to contact resistance. The analysis support printed circuit board drill analyzing microscope (PCBM) for application in organic complmentary-like technology.

AB - The effect of channel resistance (RC) on the effective channel resistance (RCH) in organic field effect transistors was investigated. It was observed that for high gate voltage, the transistors operated in electron-enhancement mode and their performance was similar to a unipolar n-type transistor. It was also observed that at drain voltage of less than +2V an injection barrier existed which contributed to contact resistance. The analysis support printed circuit board drill analyzing microscope (PCBM) for application in organic complmentary-like technology.

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U2 - 10.1002/adma.200400309

DO - 10.1002/adma.200400309

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EP - 2179

JO - Advanced Materials

JF - Advanced Materials

IS - 23-24

ER -

Ambipolar organic field-effect transistors based on a solution-processed methanofullerene

Abstract

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