TY - GEN
T1 - Amorphous metal based nanoelectromechanical switch
AU - Mayet, Abdulilah M.
AU - Smith, Casey
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/4
Y1 - 2013/4
N2 - Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.
AB - Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.
UR - http://hdl.handle.net/10754/564694
UR - http://ieeexplore.ieee.org/document/6550765/
UR - http://www.scopus.com/inward/record.url?scp=84881401145&partnerID=8YFLogxK
U2 - 10.1109/SIECPC.2013.6550765
DO - 10.1109/SIECPC.2013.6550765
M3 - Conference contribution
SN - 9781467361958
BT - 2013 Saudi International Electronics, Communications and Photonics Conference
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -