An efficient light-harvesting scheme using SiO 2 nanorods for InGaN multiple quantum well solar cells

C. H. Ho; G. J. Lin; P. H. Fu; C. A. Lin; P. C. Yang; I. Min Chan; K. Y. Lai; J. H. He

doi:10.1016/j.solmat.2012.04.007

An efficient light-harvesting scheme using SiO ₂ nanorods for InGaN multiple quantum well solar cells

C. H. Ho, G. J. Lin, P. H. Fu, C. A. Lin, P. C. Yang, I. Min Chan, K. Y. Lai, J. H. He^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

SiO ₂ nanorod arrays (NRAs) are fabricated on InGaN-based multiple quantum well (MQW) solar cells using self-assembled Ag nanoparticles as the etching mask and subsequent reactive ion etching. The SiO ₂ NRAs effectively suppress the undesired surface reflections over the wavelengths from 330 to 570 nm, which is attributed to the light-trapping effect and the improved mismatch of refractive index at the air/MQW device interface. Under the air mass 1.5 global illumination, the conversion efficiency of the solar cell is enhanced by ∼21% largely due to increased short-circuit current from 0.71 to 0.76 mA/cm ². The enhanced device performances by the optical absorption improvement are supported by the simulation analysis as well.

Original language	English (US)
Pages (from-to)	194-198
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	103
DOIs	https://doi.org/10.1016/j.solmat.2012.04.007
State	Published - Aug 2012
Externally published	Yes

Keywords

Antireflection
GaN
InGaN
Light harvesting
Nanorods

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2012.04.007

Cite this

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title = "An efficient light-harvesting scheme using SiO 2 nanorods for InGaN multiple quantum well solar cells",

abstract = "SiO 2 nanorod arrays (NRAs) are fabricated on InGaN-based multiple quantum well (MQW) solar cells using self-assembled Ag nanoparticles as the etching mask and subsequent reactive ion etching. The SiO 2 NRAs effectively suppress the undesired surface reflections over the wavelengths from 330 to 570 nm, which is attributed to the light-trapping effect and the improved mismatch of refractive index at the air/MQW device interface. Under the air mass 1.5 global illumination, the conversion efficiency of the solar cell is enhanced by ∼21% largely due to increased short-circuit current from 0.71 to 0.76 mA/cm 2. The enhanced device performances by the optical absorption improvement are supported by the simulation analysis as well.",

keywords = "Antireflection, GaN, InGaN, Light harvesting, Nanorods",

author = "Ho, {C. H.} and Lin, {G. J.} and Fu, {P. H.} and Lin, {C. A.} and Yang, {P. C.} and Chan, {I. Min} and Lai, {K. Y.} and He, {J. H.}",

year = "2012",

month = aug,

doi = "10.1016/j.solmat.2012.04.007",

language = "English (US)",

volume = "103",

pages = "194--198",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - An efficient light-harvesting scheme using SiO 2 nanorods for InGaN multiple quantum well solar cells

AU - Ho, C. H.

AU - Lin, G. J.

AU - Fu, P. H.

AU - Lin, C. A.

AU - Yang, P. C.

AU - Chan, I. Min

AU - Lai, K. Y.

AU - He, J. H.

PY - 2012/8

Y1 - 2012/8

N2 - SiO 2 nanorod arrays (NRAs) are fabricated on InGaN-based multiple quantum well (MQW) solar cells using self-assembled Ag nanoparticles as the etching mask and subsequent reactive ion etching. The SiO 2 NRAs effectively suppress the undesired surface reflections over the wavelengths from 330 to 570 nm, which is attributed to the light-trapping effect and the improved mismatch of refractive index at the air/MQW device interface. Under the air mass 1.5 global illumination, the conversion efficiency of the solar cell is enhanced by ∼21% largely due to increased short-circuit current from 0.71 to 0.76 mA/cm 2. The enhanced device performances by the optical absorption improvement are supported by the simulation analysis as well.

AB - SiO 2 nanorod arrays (NRAs) are fabricated on InGaN-based multiple quantum well (MQW) solar cells using self-assembled Ag nanoparticles as the etching mask and subsequent reactive ion etching. The SiO 2 NRAs effectively suppress the undesired surface reflections over the wavelengths from 330 to 570 nm, which is attributed to the light-trapping effect and the improved mismatch of refractive index at the air/MQW device interface. Under the air mass 1.5 global illumination, the conversion efficiency of the solar cell is enhanced by ∼21% largely due to increased short-circuit current from 0.71 to 0.76 mA/cm 2. The enhanced device performances by the optical absorption improvement are supported by the simulation analysis as well.

KW - Antireflection

KW - GaN

KW - InGaN

KW - Light harvesting

KW - Nanorods

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U2 - 10.1016/j.solmat.2012.04.007

DO - 10.1016/j.solmat.2012.04.007

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SN - 0927-0248

VL - 103

SP - 194

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

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