An energy-harvesting scheme employing CuGaSe2 quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic-organic hybrid solar cells

Cherng Rong Ho; Meng Lin Tsai; Hung Jun Jhuo; Der Hsien Lien; Chin An Lin; Shin Hung Tsai; Tzu Chiao Wei; Kun Ping Huang; Show An Chen; Jr Hau He

doi:10.1039/c3nr34155k

An energy-harvesting scheme employing CuGaSe₂ quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic-organic hybrid solar cells

Cherng Rong Ho, Meng Lin Tsai, Hung Jun Jhuo, Der Hsien Lien, Chin An Lin, Shin Hung Tsai, Tzu Chiao Wei, Kun Ping Huang, Show An Chen, Jr Hau He^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We demonstrated a promising route to enhance the performance of inverted organic photovoltaic (OPV) devices by the incorporation of CuGaSe₂ (CGS) quantum dots (QDs) into the ZnO buffer layer of P3HT:PCBM-based devices. The modification of QDs provides better band alignment between the organic/cathode interface, improves ZnO crystal quality, and increases photon absorption, leading to more effective carrier transport/collection. By employing this energy-harvesting scheme, short-circuit current density, open-circuit voltage, and fill factor of the OPV device after CGS QD modification are improved by 9.43%, 7.02% and 6.31%, respectively, giving rise to a 23.8% enhancement in the power conversion efficiency.

Original language	English (US)
Pages (from-to)	6350-6355
Number of pages	6
Journal	Nanoscale
Volume	5
Issue number	14
DOIs	https://doi.org/10.1039/c3nr34155k
State	Published - Jul 21 2013
Externally published	Yes

ASJC Scopus subject areas

General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1039/c3nr34155k

Cite this

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title = "An energy-harvesting scheme employing CuGaSe2 quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic-organic hybrid solar cells",

abstract = "We demonstrated a promising route to enhance the performance of inverted organic photovoltaic (OPV) devices by the incorporation of CuGaSe2 (CGS) quantum dots (QDs) into the ZnO buffer layer of P3HT:PCBM-based devices. The modification of QDs provides better band alignment between the organic/cathode interface, improves ZnO crystal quality, and increases photon absorption, leading to more effective carrier transport/collection. By employing this energy-harvesting scheme, short-circuit current density, open-circuit voltage, and fill factor of the OPV device after CGS QD modification are improved by 9.43%, 7.02% and 6.31%, respectively, giving rise to a 23.8% enhancement in the power conversion efficiency.",

author = "Ho, {Cherng Rong} and Tsai, {Meng Lin} and Jhuo, {Hung Jun} and Lien, {Der Hsien} and Lin, {Chin An} and Tsai, {Shin Hung} and Wei, {Tzu Chiao} and Huang, {Kun Ping} and Chen, {Show An} and He, {Jr Hau}",

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doi = "10.1039/c3nr34155k",

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T1 - An energy-harvesting scheme employing CuGaSe2 quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic-organic hybrid solar cells

AU - Ho, Cherng Rong

AU - Tsai, Meng Lin

AU - Jhuo, Hung Jun

AU - Lien, Der Hsien

AU - Lin, Chin An

AU - Tsai, Shin Hung

AU - Wei, Tzu Chiao

AU - Huang, Kun Ping

AU - Chen, Show An

AU - He, Jr Hau

PY - 2013/7/21

Y1 - 2013/7/21

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AB - We demonstrated a promising route to enhance the performance of inverted organic photovoltaic (OPV) devices by the incorporation of CuGaSe2 (CGS) quantum dots (QDs) into the ZnO buffer layer of P3HT:PCBM-based devices. The modification of QDs provides better band alignment between the organic/cathode interface, improves ZnO crystal quality, and increases photon absorption, leading to more effective carrier transport/collection. By employing this energy-harvesting scheme, short-circuit current density, open-circuit voltage, and fill factor of the OPV device after CGS QD modification are improved by 9.43%, 7.02% and 6.31%, respectively, giving rise to a 23.8% enhancement in the power conversion efficiency.

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