Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs

W. K. Cheah; W. J. Fan; S. F. Yoon; B. S. Ma; T. K. Ng; R. Liu; A. T.S. Wee

doi:10.1088/0268-1242/21/6/018

Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs

W. K. Cheah^*, W. J. Fan, S. F. Yoon, B. S. Ma, T. K. Ng, R. Liu, A. T.S. Wee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We demonstrate the use of an ultra short annealing time to minimize the overall blueshift of the photoluminescence peak emission in (In)GaAsN during rapid thermal annealing (RTA). For the first time, the redshift component has been identified as a contributor in compensating the blueshift component. In doing so, we optimize the annealing conditions in dilute nitride and also identify the dominant mechanisms via the different PL behaviour exhibited by layers of InGaAs, GaAsN and InGaAsN embedded in GaAs as the annealing temperature is varied from 650 to 850 °C for t = 20 s.

Original language	English (US)
Pages (from-to)	808-812
Number of pages	5
Journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume	21
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/21/6/018
State	Published - Jun 1 2006
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{97f1279fa3fc458387601c8907581168,

title = "Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs",

abstract = "We demonstrate the use of an ultra short annealing time to minimize the overall blueshift of the photoluminescence peak emission in (In)GaAsN during rapid thermal annealing (RTA). For the first time, the redshift component has been identified as a contributor in compensating the blueshift component. In doing so, we optimize the annealing conditions in dilute nitride and also identify the dominant mechanisms via the different PL behaviour exhibited by layers of InGaAs, GaAsN and InGaAsN embedded in GaAs as the annealing temperature is varied from 650 to 850 °C for t = 20 s.",

author = "Cheah, {W. K.} and Fan, {W. J.} and Yoon, {S. F.} and Ma, {B. S.} and Ng, {T. K.} and R. Liu and Wee, {A. T.S.}",

year = "2006",

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doi = "10.1088/0268-1242/21/6/018",

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T1 - Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs

AU - Cheah, W. K.

AU - Fan, W. J.

AU - Yoon, S. F.

AU - Ma, B. S.

AU - Ng, T. K.

AU - Liu, R.

AU - Wee, A. T.S.

PY - 2006/6/1

Y1 - 2006/6/1

N2 - We demonstrate the use of an ultra short annealing time to minimize the overall blueshift of the photoluminescence peak emission in (In)GaAsN during rapid thermal annealing (RTA). For the first time, the redshift component has been identified as a contributor in compensating the blueshift component. In doing so, we optimize the annealing conditions in dilute nitride and also identify the dominant mechanisms via the different PL behaviour exhibited by layers of InGaAs, GaAsN and InGaAsN embedded in GaAs as the annealing temperature is varied from 650 to 850 °C for t = 20 s.

AB - We demonstrate the use of an ultra short annealing time to minimize the overall blueshift of the photoluminescence peak emission in (In)GaAsN during rapid thermal annealing (RTA). For the first time, the redshift component has been identified as a contributor in compensating the blueshift component. In doing so, we optimize the annealing conditions in dilute nitride and also identify the dominant mechanisms via the different PL behaviour exhibited by layers of InGaAs, GaAsN and InGaAsN embedded in GaAs as the annealing temperature is varied from 650 to 850 °C for t = 20 s.

UR - http://www.scopus.com/inward/record.url?scp=33646734879&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/6/018

DO - 10.1088/0268-1242/21/6/018

M3 - Article

AN - SCOPUS:33646734879

SN - 0268-1242

VL - 21

SP - 808

EP - 812

JO - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

JF - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IS - 6

ER -

Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs

Abstract

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