TY - JOUR
T1 - Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer
AU - Ng, Tien Khee
AU - Khan, Mohammed Zahed Mustafa
AU - Al-Jabr, Ahmad
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: KAUST—University of Michigan Academic Excellence Alliance Grant 2010
PY - 2012/2/10
Y1 - 2012/2/10
N2 - A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ?1.2 ?m, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ?11.5 dB in the wavelength range of 1.2-1.6 ?m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates. © 1989-2012 IEEE.
AB - A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ?1.2 ?m, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ?11.5 dB in the wavelength range of 1.2-1.6 ?m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates. © 1989-2012 IEEE.
UR - http://hdl.handle.net/10754/308860
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6151033
UR - http://www.scopus.com/inward/record.url?scp=84859792562&partnerID=8YFLogxK
U2 - 10.1109/LPT.2012.2187329
DO - 10.1109/LPT.2012.2187329
M3 - Article
SN - 1041-1135
VL - 24
SP - 724
EP - 726
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 9
ER -