The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (e-hh) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band kp band formalism. The design of active region consisting of 30 Å In0.25 Ga0.75 N QW with InN delta-layer leads to large e-hh of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Sep 27 2010|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)