Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation

Kenichi Nakamura; Akira Hirako; Kazuhiro Ohkawa

doi:10.1002/pssc.200983580

Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation

Kenichi Nakamura^*, Akira Hirako, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

We report computational analysis of gas-phase states and main reaction pathways under AlN metalorganic vaporphase epitaxy (MOVPE) by pulsed injection (PI) method of precursors. Interval times of 0-2 s were inserted between trimethylaluminum (Al(CH₃); TMAl) and ammonia (NH₃) supply phases to suppress parasitic reactions. In the cases of the interval time of 0 s, polymers and Al-N molecules were dominant species due to parasitic reaction, and the growth species was Al-N molecules generated by TMAl:NH₃ pyrolysis. When an interval time was inserted between TMAl and NH₃, mixing of TMAl and NH₃ were suppressed. Al and NH₂ generated from each precursor were dominant species. The main reaction pathway changed from TMAl:NH₃ pyrolysis into TMAl pyrolysis with increasing the interval time.

Original language	English (US)
Pages (from-to)	2268-2271
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.200983580
State	Published - 2010
Externally published	Yes
Event	8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: Oct 18 2009 → Oct 23 2009

Keywords

AlN
Chemistry
MOVPE
Simulation

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200983580

Cite this

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title = "Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation",

abstract = "We report computational analysis of gas-phase states and main reaction pathways under AlN metalorganic vaporphase epitaxy (MOVPE) by pulsed injection (PI) method of precursors. Interval times of 0-2 s were inserted between trimethylaluminum (Al(CH3); TMAl) and ammonia (NH3) supply phases to suppress parasitic reactions. In the cases of the interval time of 0 s, polymers and Al-N molecules were dominant species due to parasitic reaction, and the growth species was Al-N molecules generated by TMAl:NH3 pyrolysis. When an interval time was inserted between TMAl and NH3, mixing of TMAl and NH3 were suppressed. Al and NH2 generated from each precursor were dominant species. The main reaction pathway changed from TMAl:NH3 pyrolysis into TMAl pyrolysis with increasing the interval time.",

keywords = "AlN, Chemistry, MOVPE, Simulation",

author = "Kenichi Nakamura and Akira Hirako and Kazuhiro Ohkawa",

year = "2010",

doi = "10.1002/pssc.200983580",

language = "English (US)",

volume = "7",

pages = "2268--2271",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "7-8",

note = "8th International Conference on Nitride Semiconductors, ICNS-8 ; Conference date: 18-10-2009 Through 23-10-2009",

}

TY - JOUR

T1 - Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation

AU - Nakamura, Kenichi

AU - Hirako, Akira

AU - Ohkawa, Kazuhiro

PY - 2010

Y1 - 2010

N2 - We report computational analysis of gas-phase states and main reaction pathways under AlN metalorganic vaporphase epitaxy (MOVPE) by pulsed injection (PI) method of precursors. Interval times of 0-2 s were inserted between trimethylaluminum (Al(CH3); TMAl) and ammonia (NH3) supply phases to suppress parasitic reactions. In the cases of the interval time of 0 s, polymers and Al-N molecules were dominant species due to parasitic reaction, and the growth species was Al-N molecules generated by TMAl:NH3 pyrolysis. When an interval time was inserted between TMAl and NH3, mixing of TMAl and NH3 were suppressed. Al and NH2 generated from each precursor were dominant species. The main reaction pathway changed from TMAl:NH3 pyrolysis into TMAl pyrolysis with increasing the interval time.

AB - We report computational analysis of gas-phase states and main reaction pathways under AlN metalorganic vaporphase epitaxy (MOVPE) by pulsed injection (PI) method of precursors. Interval times of 0-2 s were inserted between trimethylaluminum (Al(CH3); TMAl) and ammonia (NH3) supply phases to suppress parasitic reactions. In the cases of the interval time of 0 s, polymers and Al-N molecules were dominant species due to parasitic reaction, and the growth species was Al-N molecules generated by TMAl:NH3 pyrolysis. When an interval time was inserted between TMAl and NH3, mixing of TMAl and NH3 were suppressed. Al and NH2 generated from each precursor were dominant species. The main reaction pathway changed from TMAl:NH3 pyrolysis into TMAl pyrolysis with increasing the interval time.

KW - AlN

KW - Chemistry

KW - MOVPE

KW - Simulation

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U2 - 10.1002/pssc.200983580

DO - 10.1002/pssc.200983580

M3 - Conference article

AN - SCOPUS:77955840294

SN - 1862-6351

VL - 7

SP - 2268

EP - 2271

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

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T2 - 8th International Conference on Nitride Semiconductors, ICNS-8

Y2 - 18 October 2009 through 23 October 2009

ER -

Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation

Abstract

Keywords

ASJC Scopus subject areas

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