Analysis of the Drude model in metallic films

H. Y. Li; S. M. Zhou; J. Li; Y. L. Chen; S. Y. Wang; Z. C. Shen; L. Y. Chen; H. Liu; X. X. Zhang

doi:10.1364/AO.40.006307

Analysis of the Drude model in metallic films

H. Y. Li, S. M. Zhou, J. Li, Y. L. Chen, S. Y. Wang, Z. C. Shen, L. Y. Chen, H. Liu, X. X. Zhang

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi₂ and TaSi₂, films have been studied.

Original language	English (US)
Pages (from-to)	6307-6311
Number of pages	5
Journal	Applied Optics
Volume	40
Issue number	34
DOIs	https://doi.org/10.1364/AO.40.006307
State	Published - Dec 1 2001
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1364/AO.40.006307

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abstract = "A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi2 and TaSi2, films have been studied.",

author = "Li, {H. Y.} and Zhou, {S. M.} and J. Li and Chen, {Y. L.} and Wang, {S. Y.} and Shen, {Z. C.} and Chen, {L. Y.} and H. Liu and Zhang, {X. X.}",

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AU - Li, H. Y.

AU - Zhou, S. M.

AU - Li, J.

AU - Chen, Y. L.

AU - Wang, S. Y.

AU - Shen, Z. C.

AU - Chen, L. Y.

AU - Liu, H.

AU - Zhang, X. X.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi2 and TaSi2, films have been studied.

AB - A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi2 and TaSi2, films have been studied.

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M3 - Article

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JO - Applied Optics

JF - Applied Optics

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ER -

Analysis of the Drude model in metallic films

Abstract

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