In this paper we derive conditions for bounding the state change in a memristor due to an applied signal. The main memristor functionality is a programmable resistor, but its resistance changes due to the signal passing through it. Therefore, it is necessary to guarantee that any signal through the memristor causes a small resistance change as tolerable by the application. The derived conditions relate the desired bound on the resistance change to a bound on the signal flux through the memristor. We show examples for the case of a sinusoidal signal and demonstrate the impact of the derived conditions on the design of memristor-based systems. © 2014 IEEE.
|Original language||English (US)|
|Title of host publication||Proceedings - IEEE International Symposium on Circuits and Systems|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|State||Published - Jan 1 2014|