TY - JOUR
T1 - Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi
AU - Xu, Guizhou
AU - Hou, Zhipeng
AU - Wang, Yue
AU - Zhang, Xiaoming
AU - Zhang, Hongwei
AU - Liu, Enke
AU - Xi, X. K.
AU - Xu, Feng
AU - Wu, Guangheng
AU - Zhang, Xixiang
AU - Wang, Wenhong
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRF-2015-2549-CRG4
Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: CRF-2015-2549-CRG4, National Natural Science Foundation of China (Grant Nos. 51571121 and 11604148), Jiangsu Natural Science Foundation for Distinguished Young Scholars (Grant No. BK20140035), Natural Science Foundation of Jiangsu Province (Grant No. BK20160829) and Qing Lan Project of Jiangsu Province. It is also funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions.
PY - 2017/4/5
Y1 - 2017/4/5
N2 - The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.
AB - The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.
UR - http://hdl.handle.net/10754/623069
UR - http://iopscience.iop.org/article/10.1088/1361-648X/aa6695
UR - http://www.scopus.com/inward/record.url?scp=85017430310&partnerID=8YFLogxK
U2 - 10.1088/1361-648x/aa6695
DO - 10.1088/1361-648x/aa6695
M3 - Article
C2 - 28290375
SN - 0953-8984
VL - 29
SP - 195501
JO - Journal of Physics: Condensed Matter
JF - Journal of Physics: Condensed Matter
IS - 19
ER -