Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO3 thin films via polarization rotation.

Guoqiang Xi, Zhao Pan, Yue-Wen Fang, Jie Tu, Hangren Li, Qianqian Yang, Chen Liu, Huajie Luo, Jiaqi Ding, Shuai Xu, Shiqing Deng, Qingxiao Wang, Dongxing Zheng, Youwen Long, Kuijuan Jin, Xixiang Zhang, Jianjun Tian, Linxing Zhang

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Abstract

Polarization rotation caused by various strains, such as substrate and/or chemical strain, is essential to control the electronic structure and properties of ferroelectric materials. This study proposes anion-induced polarization rotation with chemical strain, which effectively improves ferroelectricity. A method for the sulfurization of BiFeO3 thin films by introducing sulfur anions is presented. The sulfurized films exhibited substantial enhancement in room-temperature ferroelectric polarization through polarization rotation and distortion, with a 170% increase in the remnant polarization from 58 to 100.7 μC cm-2. According to first-principles calculations and the results of X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy, this enhancement arose from the introduction of S atoms driving the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.
Original languageEnglish (US)
JournalMaterials Horizons
DOIs
StatePublished - Jul 11 2023

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