TY - JOUR
T1 - Anomalous Hall effect in polycrystalline Ni films
AU - Guo, Zaibing
AU - Mi, Wenbo
AU - Zhang, Qiang
AU - Zhang, Bei
AU - Aboljadayel, Razan
AU - Zhang, Xixiang
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2012/2
Y1 - 2012/2
N2 - We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.
AB - We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.
UR - http://hdl.handle.net/10754/562070
UR - https://linkinghub.elsevier.com/retrieve/pii/S003810981100593X
UR - http://www.scopus.com/inward/record.url?scp=84655175069&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2011.10.039
DO - 10.1016/j.ssc.2011.10.039
M3 - Article
SN - 0038-1098
VL - 152
SP - 220
EP - 224
JO - Solid State Communications
JF - Solid State Communications
IS - 3
ER -