Application of x-ray metrology in the characterization of metal gate thin films

P. Y. Hung; Husam Alshareef; Tamzin Lafford; D. Keith Bowen; Prashant Majhi; Alain Diebold

doi:10.1116/1.2335430

Application of x-ray metrology in the characterization of metal gate thin films

P. Y. Hung^*, Husam Alshareef, Tamzin Lafford, D. Keith Bowen, Prashant Majhi, Alain Diebold

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Physical characterization of as-deposited and 1000 °C annealed Ta _xAl _1-xN thin films was performed using several characterization techniques. X-ray diffraction metrology shows that the crystallographic phase and crystallinity of TaN and AlN films vary with composition. The unannealed TaN film was cubic TaN, while the annealed TaN was mixed hexagonal Ta ₂N and hexagonal TaN. Both AlN films were hexagonal, with the annealed film having a higher crystalline fraction. However, Ta _xAl _1-xN films displayed a relatively small change in crystalline fraction and crystallography. Well behaved capacitors were fabricated, and a work function of ∼5.0 eV was obtained.

Original language	English (US)
Pages (from-to)	2434-2438
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	5
DOIs	https://doi.org/10.1116/1.2335430
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Physical characterization of as-deposited and 1000 °C annealed Ta xAl 1-xN thin films was performed using several characterization techniques. X-ray diffraction metrology shows that the crystallographic phase and crystallinity of TaN and AlN films vary with composition. The unannealed TaN film was cubic TaN, while the annealed TaN was mixed hexagonal Ta 2N and hexagonal TaN. Both AlN films were hexagonal, with the annealed film having a higher crystalline fraction. However, Ta xAl 1-xN films displayed a relatively small change in crystalline fraction and crystallography. Well behaved capacitors were fabricated, and a work function of ∼5.0 eV was obtained.",

author = "Hung, {P. Y.} and Husam Alshareef and Tamzin Lafford and Bowen, {D. Keith} and Prashant Majhi and Alain Diebold",

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T1 - Application of x-ray metrology in the characterization of metal gate thin films

AU - Hung, P. Y.

AU - Alshareef, Husam

AU - Lafford, Tamzin

AU - Bowen, D. Keith

AU - Majhi, Prashant

AU - Diebold, Alain

PY - 2006

Y1 - 2006

N2 - Physical characterization of as-deposited and 1000 °C annealed Ta xAl 1-xN thin films was performed using several characterization techniques. X-ray diffraction metrology shows that the crystallographic phase and crystallinity of TaN and AlN films vary with composition. The unannealed TaN film was cubic TaN, while the annealed TaN was mixed hexagonal Ta 2N and hexagonal TaN. Both AlN films were hexagonal, with the annealed film having a higher crystalline fraction. However, Ta xAl 1-xN films displayed a relatively small change in crystalline fraction and crystallography. Well behaved capacitors were fabricated, and a work function of ∼5.0 eV was obtained.

AB - Physical characterization of as-deposited and 1000 °C annealed Ta xAl 1-xN thin films was performed using several characterization techniques. X-ray diffraction metrology shows that the crystallographic phase and crystallinity of TaN and AlN films vary with composition. The unannealed TaN film was cubic TaN, while the annealed TaN was mixed hexagonal Ta 2N and hexagonal TaN. Both AlN films were hexagonal, with the annealed film having a higher crystalline fraction. However, Ta xAl 1-xN films displayed a relatively small change in crystalline fraction and crystallography. Well behaved capacitors were fabricated, and a work function of ∼5.0 eV was obtained.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Application of x-ray metrology in the characterization of metal gate thin films

Abstract

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