TY - JOUR
T1 - Atomic layer epitaxy of AlGaN
AU - Nagamatsu, Kentaro
AU - Iida, Daisuke
AU - Takeda, Kenichiro
AU - Nagata, Kensuke
AU - Asai, Toshiaki
AU - Iwaya, Motoaki
AU - Kamiyama, Satoshi
AU - Amano, Hiroshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2010/10/1
Y1 - 2010/10/1
N2 - Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-inch wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temperature growth of high-quality AlGaN has been achieved using HSSVs. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-inch wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temperature growth of high-quality AlGaN has been achieved using HSSVs. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200983862
UR - http://www.scopus.com/inward/record.url?scp=78449266183&partnerID=8YFLogxK
U2 - 10.1002/pssc.200983862
DO - 10.1002/pssc.200983862
M3 - Article
SN - 1862-6351
VL - 7
SP - 2368
EP - 2370
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 10
ER -