Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

Yann Wen Lan, Carlos M. Torres, Shin Hung Tsai, Xiaodan Zhu, Yumeng Shi, Ming-yang Li, Lain-Jong Li, Wen Kuan Yeh, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

44 Scopus citations


The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
Original languageEnglish (US)
Pages (from-to)5676-5683
Number of pages8
Issue number41
StatePublished - Sep 4 2016


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