TY - JOUR
T1 - Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon
AU - Lin, Che-Yu
AU - Zhu, Xiaodan
AU - Tsai, Shin-Hung
AU - Tsai, Shiao-Po
AU - Lei, Sidong
AU - Li, Ming-yang
AU - Shi, Yumeng
AU - Li, Lain-Jong
AU - Huang, Shyh-Jer
AU - Wu, Wen-Fa
AU - Yeh, Wen-Kuan
AU - Su, Yan-Kuin
AU - Wang, Kang L.
AU - Lan, Yann-Wen
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Science Council, Taiwan under contract No. MOST 105-2112-M-492-003-MY3. This work was also in part supported by the National Nano Device Laboratories and Core facilities at UCLA. We would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technologies (CEGN).
PY - 2017/10/24
Y1 - 2017/10/24
N2 - High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.
AB - High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.
UR - http://hdl.handle.net/10754/625850
UR - http://pubs.acs.org/doi/abs/10.1021/acsnano.7b05012
UR - http://www.scopus.com/inward/record.url?scp=85035359032&partnerID=8YFLogxK
U2 - 10.1021/acsnano.7b05012
DO - 10.1021/acsnano.7b05012
M3 - Article
C2 - 28976732
SN - 1936-0851
VL - 11
SP - 11015
EP - 11023
JO - ACS Nano
JF - ACS Nano
IS - 11
ER -