Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Andrew C. Espenlaub; Abdullah I. Alhassan; Shuji Nakamura; Claude Weisbuch; James S. Speck

doi:10.1063/1.5021475

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Andrew C. Espenlaub, Abdullah I. Alhassan, Shuji Nakamura, Claude Weisbuch, James S. Speck

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Original language	English (US)
Pages (from-to)	141106
Journal	Applied Physics Letters
Volume	112
Issue number	14
DOIs	https://doi.org/10.1063/1.5021475
State	Published - Apr 3 2018
Externally published	Yes

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title = "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes",

abstract = "We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.",

author = "Espenlaub, {Andrew C.} and Alhassan, {Abdullah I.} and Shuji Nakamura and Claude Weisbuch and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the US Department of Energy Solid-State Lighting Program under Agreement No. DE-EE0007096 and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2018",

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doi = "10.1063/1.5021475",

language = "English (US)",

volume = "112",

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journal = "Applied Physics Letters",

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T1 - Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

AU - Espenlaub, Andrew C.

AU - Alhassan, Abdullah I.

AU - Nakamura, Shuji

AU - Weisbuch, Claude

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the US Department of Energy Solid-State Lighting Program under Agreement No. DE-EE0007096 and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2018/4/3

Y1 - 2018/4/3

N2 - We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

AB - We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

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U2 - 10.1063/1.5021475

DO - 10.1063/1.5021475

M3 - Article

SN - 0003-6951

VL - 112

SP - 141106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

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