Back-end-of-line integration of 2D materials on silicon microchips

M. Lanza; S. Pazos; K. Zhu; Y. Yuan; Y. Shen; O. Alharbi; W. Zheng; X. Zhang; H. N. Alshareef

doi:10.1109/IEDM45741.2023.10413883

Back-end-of-line integration of 2D materials on silicon microchips

M. Lanza^*, S. Pazos, K. Zhu, Y. Yuan, Y. Shen, O. Alharbi, W. Zheng, X. Zhang, H. N. Alshareef

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Two-dimensional (2D) materials have excellent electronic and thermal properties that could help to improve the performance of electronic devices and circuits. However, scalable 2D materials synthesis and their integration in silicon microchips (with, for example, complementary metal-oxide-semiconductor, CMOS) transistors presents some challenges, mainly related to the presence of local defects that degrade device/circuit performance. In this invited article, we discuss the integration of 2D materials in silicon microchips. We analyze the type of materials and their properties, the main synthesis and manipulation methods, the type of circuits fabricated, the electronic performance achieved, as well as the future challenges and solutions. We focus on microchips with pre-patterned CMOS circuits on which the 2D material is deposited at the back-end-of-line (BEOL).

Original language	English (US)
Title of host publication	2023 International Electron Devices Meeting, IEDM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327670
DOIs	https://doi.org/10.1109/IEDM45741.2023.10413883
State	Published - 2023
Event	2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States Duration: Dec 9 2023 → Dec 13 2023

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2023 International Electron Devices Meeting, IEDM 2023
Country/Territory	United States
City	San Francisco
Period	12/9/23 → 12/13/23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM45741.2023.10413883

Cite this

Lanza, M., Pazos, S., Zhu, K., Yuan, Y., Shen, Y., Alharbi, O., Zheng, W., Zhang, X., & Alshareef, H. N. (2023). Back-end-of-line integration of 2D materials on silicon microchips. In 2023 International Electron Devices Meeting, IEDM 2023 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45741.2023.10413883

@inproceedings{31587da825e8489987e4f993cebd6a01,

title = "Back-end-of-line integration of 2D materials on silicon microchips",

abstract = "Two-dimensional (2D) materials have excellent electronic and thermal properties that could help to improve the performance of electronic devices and circuits. However, scalable 2D materials synthesis and their integration in silicon microchips (with, for example, complementary metal-oxide-semiconductor, CMOS) transistors presents some challenges, mainly related to the presence of local defects that degrade device/circuit performance. In this invited article, we discuss the integration of 2D materials in silicon microchips. We analyze the type of materials and their properties, the main synthesis and manipulation methods, the type of circuits fabricated, the electronic performance achieved, as well as the future challenges and solutions. We focus on microchips with pre-patterned CMOS circuits on which the 2D material is deposited at the back-end-of-line (BEOL).",

author = "M. Lanza and S. Pazos and K. Zhu and Y. Yuan and Y. Shen and O. Alharbi and W. Zheng and X. Zhang and Alshareef, \{H. N.\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",

year = "2023",

doi = "10.1109/IEDM45741.2023.10413883",

language = "English (US)",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International Electron Devices Meeting, IEDM 2023",

address = "United States",

}

Lanza, M, Pazos, S, Zhu, K, Yuan, Y, Shen, Y, Alharbi, O, Zheng, W, Zhang, X & Alshareef, HN 2023, Back-end-of-line integration of 2D materials on silicon microchips. in 2023 International Electron Devices Meeting, IEDM 2023. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2023 International Electron Devices Meeting, IEDM 2023, San Francisco, United States, 12/9/23. https://doi.org/10.1109/IEDM45741.2023.10413883

Back-end-of-line integration of 2D materials on silicon microchips. / Lanza, M.; Pazos, S.; Zhu, K. et al.
2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Back-end-of-line integration of 2D materials on silicon microchips

AU - Lanza, M.

AU - Pazos, S.

AU - Zhu, K.

AU - Yuan, Y.

AU - Shen, Y.

AU - Alharbi, O.

AU - Zheng, W.

AU - Zhang, X.

AU - Alshareef, H. N.

PY - 2023

Y1 - 2023

N2 - Two-dimensional (2D) materials have excellent electronic and thermal properties that could help to improve the performance of electronic devices and circuits. However, scalable 2D materials synthesis and their integration in silicon microchips (with, for example, complementary metal-oxide-semiconductor, CMOS) transistors presents some challenges, mainly related to the presence of local defects that degrade device/circuit performance. In this invited article, we discuss the integration of 2D materials in silicon microchips. We analyze the type of materials and their properties, the main synthesis and manipulation methods, the type of circuits fabricated, the electronic performance achieved, as well as the future challenges and solutions. We focus on microchips with pre-patterned CMOS circuits on which the 2D material is deposited at the back-end-of-line (BEOL).

AB - Two-dimensional (2D) materials have excellent electronic and thermal properties that could help to improve the performance of electronic devices and circuits. However, scalable 2D materials synthesis and their integration in silicon microchips (with, for example, complementary metal-oxide-semiconductor, CMOS) transistors presents some challenges, mainly related to the presence of local defects that degrade device/circuit performance. In this invited article, we discuss the integration of 2D materials in silicon microchips. We analyze the type of materials and their properties, the main synthesis and manipulation methods, the type of circuits fabricated, the electronic performance achieved, as well as the future challenges and solutions. We focus on microchips with pre-patterned CMOS circuits on which the 2D material is deposited at the back-end-of-line (BEOL).

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AN - SCOPUS:85185592341

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2023 International Electron Devices Meeting, IEDM 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International Electron Devices Meeting, IEDM 2023

Y2 - 9 December 2023 through 13 December 2023

ER -

Back-end-of-line integration of 2D materials on silicon microchips

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