TY - JOUR
T1 - BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
AU - Gu, Wen
AU - Lu, Yi
AU - Lin, Rongyu
AU - Guo, Wenzhe
AU - Zhang, Zi-hui
AU - Ryou, Jae-Hyun
AU - Yan, Jianchang
AU - Wang, Junxi
AU - Li, Jinmin
AU - Li, Xiaohang
N1 - KAUST Repository Item: Exported on 2021-01-28
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The KAUST authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01. The authors of Institute of Semiconductors would like to acknowledge the support of National Key R&D Program of China 2016YFB0400800, National Natural Sciences Foundation of China 61875187, 61527814, 61674147, and U1505253, Beijing Nova Program Z181100006218007, and Youth Innovation Promotion Association CAS 2017157.
PY - 2021/1/22
Y1 - 2021/1/22
N2 - The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al0.3Ga0.7N EBL with a doping concentration of 1×1020 /cm3, the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.
AB - The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al0.3Ga0.7N EBL with a doping concentration of 1×1020 /cm3, the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.
UR - http://hdl.handle.net/10754/666240
UR - https://iopscience.iop.org/article/10.1088/1361-6463/abdefc
U2 - 10.1088/1361-6463/abdefc
DO - 10.1088/1361-6463/abdefc
M3 - Article
SN - 0022-3727
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
ER -