TY - JOUR
T1 - Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
AU - Sun, Haiding
AU - Park, Young Jae
AU - Li, Kuang-Hui
AU - Torres Castanedo, C. G.
AU - Alowayed, Abdulmohsen
AU - Detchprohm, Theeradetch
AU - Dupuis, Russell D.
AU - Li, Xiaohang
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The KAUST authors would like to acknowledge the support of GCC Research Program No. REP/1/3189-01-01, Baseline No. BAS/1/1664-01-01, and Equipment No. BAS/1/1664-01-07. The work at Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
PY - 2017/9/21
Y1 - 2017/9/21
N2 - Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.
AB - Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.
UR - http://hdl.handle.net/10754/625530
UR - http://aip.scitation.org/doi/10.1063/1.4999249
UR - http://www.scopus.com/inward/record.url?scp=85029872849&partnerID=8YFLogxK
U2 - 10.1063/1.4999249
DO - 10.1063/1.4999249
M3 - Article
SN - 0003-6951
VL - 111
SP - 122106
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
ER -