@inproceedings{de40bdb08c004e548bec2bda88288bed,
title = " Band-edge effective work functions by controlling HfO 2 /TiN interfacial composition for gate-last CMOS ",
abstract = " Effective work function (EWF) changes of TiN/HfO 2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO 2 interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×10 21 cm -3 near the TiN/HfO 2 interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO 2 interface cause the formation of dipoles that increase the EWF.",
author = "Hinkle, {C. L.} and Galatage, {R. V.} and Chapman, {R. A.} and Vogel, {E. M.} and Alshareef, {Husam Niman} and C. Freeman and E. Wimmer and H. Niimi and A. Li-Fatou and Chambers, {J. J.} and Shaw, {J. B.}",
year = "2011",
month = aug,
day = "1",
doi = "10.1149/1.3568871",
language = "English (US)",
isbn = "9781566778633",
series = "ECS Transactions",
number = "2",
pages = "285--295",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications",
edition = "2",
note = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting ; Conference date: 02-05-2011 Through 04-05-2011",
}