Band-edge effective work functions by controlling HfO2/TiN interfacial composition for gate-last CMOS

C. L. Hinkle; R. V. Galatage; R. A. Chapman; E. M. Vogel; H. N. Alshareef; C. Freeman; E. Wimmer; H. Niimi; A. Li-Fatou; J. J. Chambers; J. B. Shaw

doi:10.1149/1.3568871

Band-edge effective work functions by controlling HfO₂/TiN interfacial composition for gate-last CMOS

C. L. Hinkle^*, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, J. B. Shaw

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Effective work function (EWF) changes of TiN/HfO₂ annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO₂ interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×10²¹ cm^-3 near the TiN/HfO₂ interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO₂ interface cause the formation of dipoles that increase the EWF.

Original language	English (US)
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
Publisher	Electrochemical Society Inc.
Pages	285-295
Number of pages	11
Edition	2
ISBN (Electronic)	9781607682134
ISBN (Print)	9781566778633
DOIs	https://doi.org/10.1149/1.3568871
State	Published - 2011

Publication series

Name	ECS Transactions
Number	2
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3568871

Cite this

Hinkle, C. L., Galatage, R. V., Chapman, R. A., Vogel, E. M., Alshareef, H. N., Freeman, C., Wimmer, E., Niimi, H., Li-Fatou, A., Chambers, J. J., & Shaw, J. B. (2011). Band-edge effective work functions by controlling HfO₂/TiN interfacial composition for gate-last CMOS. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications (2 ed., pp. 285-295). (ECS Transactions; Vol. 35, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3568871

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title = "Band-edge effective work functions by controlling HfO2/TiN interfacial composition for gate-last CMOS",

abstract = "Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO2 interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×1021 cm-3 near the TiN/HfO2 interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2 interface cause the formation of dipoles that increase the EWF.",

author = "Hinkle, {C. L.} and Galatage, {R. V.} and Chapman, {R. A.} and Vogel, {E. M.} and Alshareef, {H. N.} and C. Freeman and E. Wimmer and H. Niimi and A. Li-Fatou and Chambers, {J. J.} and Shaw, {J. B.}",

year = "2011",

doi = "10.1149/1.3568871",

language = "English (US)",

isbn = "9781566778633",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "285--295",

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Hinkle, CL, Galatage, RV, Chapman, RA, Vogel, EM, Alshareef, HN, Freeman, C, Wimmer, E, Niimi, H, Li-Fatou, A, Chambers, JJ & Shaw, JB 2011, Band-edge effective work functions by controlling HfO₂/TiN interfacial composition for gate-last CMOS. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2 edn, ECS Transactions, no. 2, vol. 35, Electrochemical Society Inc., pp. 285-295. https://doi.org/10.1149/1.3568871

Band-edge effective work functions by controlling HfO₂/TiN interfacial composition for gate-last CMOS. / Hinkle, C. L.; Galatage, R. V.; Chapman, R. A. et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2. ed. Electrochemical Society Inc., 2011. p. 285-295 (ECS Transactions; Vol. 35, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hinkle, C. L.

AU - Galatage, R. V.

AU - Chapman, R. A.

AU - Vogel, E. M.

AU - Alshareef, H. N.

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AU - Niimi, H.

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AU - Chambers, J. J.

AU - Shaw, J. B.

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AB - Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO2 interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×1021 cm-3 near the TiN/HfO2 interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2 interface cause the formation of dipoles that increase the EWF.

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Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C et al. Band-edge effective work functions by controlling HfO₂/TiN interfacial composition for gate-last CMOS. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2 ed. Electrochemical Society Inc. 2011. p. 285-295. (ECS Transactions; 2). doi: 10.1149/1.3568871