Band-edge effective work functions by controlling HfO
                        2
                        /TiN interfacial composition for gate-last CMOS

C. L. Hinkle; R. V. Galatage; R. A. Chapman; E. M. Vogel; Husam Niman Alshareef; C. Freeman; E. Wimmer; H. Niimi; A. Li-Fatou; J. J. Chambers; J. B. Shaw

doi:10.1149/1.3568871

Band-edge effective work functions by controlling HfO ₂ /TiN interfacial composition for gate-last CMOS

C. L. Hinkle^*, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam Niman Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, J. B. Shaw

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Effective work function (EWF) changes of TiN/HfO ₂ annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO ₂ interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×10 ²¹ cm ^-3 near the TiN/HfO ₂ interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO ₂ interface cause the formation of dipoles that increase the EWF.

Original language	English (US)
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
Pages	285-295
Number of pages	11
Edition	2
DOIs	https://doi.org/10.1149/1.3568871
State	Published - Aug 1 2011
Event	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting - Montreal, QC, Canada Duration: May 2 2011 → May 4 2011

Publication series

Name	ECS Transactions
Number	2
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting
Country/Territory	Canada
City	Montreal, QC
Period	05/2/11 → 05/4/11

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3568871

Cite this

Hinkle, C. L., Galatage, R. V., Chapman, R. A., Vogel, E. M., Alshareef, H. N., Freeman, C., Wimmer, E., Niimi, H., Li-Fatou, A., Chambers, J. J., & Shaw, J. B. (2011). Band-edge effective work functions by controlling HfO ₂ /TiN interfacial composition for gate-last CMOS In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications (2 ed., pp. 285-295). (ECS Transactions; Vol. 35, No. 2). https://doi.org/10.1149/1.3568871

Hinkle, C. L. ; Galatage, R. V. ; Chapman, R. A. et al. / Band-edge effective work functions by controlling HfO ₂ /TiN interfacial composition for gate-last CMOS Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2. ed. 2011. pp. 285-295 (ECS Transactions; 2).

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title = " Band-edge effective work functions by controlling HfO 2 /TiN interfacial composition for gate-last CMOS ",

abstract = " Effective work function (EWF) changes of TiN/HfO 2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO 2 interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×10 21 cm -3 near the TiN/HfO 2 interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO 2 interface cause the formation of dipoles that increase the EWF.",

author = "Hinkle, {C. L.} and Galatage, {R. V.} and Chapman, {R. A.} and Vogel, {E. M.} and Alshareef, {Husam Niman} and C. Freeman and E. Wimmer and H. Niimi and A. Li-Fatou and Chambers, {J. J.} and Shaw, {J. B.}",

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doi = "10.1149/1.3568871",

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booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications",

edition = "2",

note = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting ; Conference date: 02-05-2011 Through 04-05-2011",

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Hinkle, CL, Galatage, RV, Chapman, RA, Vogel, EM, Alshareef, HN, Freeman, C, Wimmer, E, Niimi, H, Li-Fatou, A, Chambers, JJ & Shaw, JB 2011, Band-edge effective work functions by controlling HfO ₂ /TiN interfacial composition for gate-last CMOS in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2 edn, ECS Transactions, no. 2, vol. 35, pp. 285-295, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting, Montreal, QC, Canada, 05/2/11. https://doi.org/10.1149/1.3568871

Band-edge effective work functions by controlling HfO ₂ /TiN interfacial composition for gate-last CMOS . / Hinkle, C. L.; Galatage, R. V.; Chapman, R. A. et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2. ed. 2011. p. 285-295 (ECS Transactions; Vol. 35, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Vogel, E. M.

AU - Alshareef, Husam Niman

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AU - Chambers, J. J.

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AB - Effective work function (EWF) changes of TiN/HfO 2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO 2 interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×10 21 cm -3 near the TiN/HfO 2 interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO 2 interface cause the formation of dipoles that increase the EWF.

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Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C et al. Band-edge effective work functions by controlling HfO ₂ /TiN interfacial composition for gate-last CMOS In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2 ed. 2011. p. 285-295. (ECS Transactions; 2). doi: 10.1149/1.3568871