Band-edge energies and photoelectrochemical properties of n-type Al xGa1-xN and InyGa1-yN alloys

Katsushi Fujii; Masato Ono; Takashi Ito; Yasuhiro Iwaki; Akira Hirako; Kazuhiro Ohkawa

doi:10.1149/1.2402104

Band-edge energies and photoelectrochemical properties of n-type Al _xGa_1-xN and In_yGa_1-yN alloys

Katsushi Fujii^*, Masato Ono, Takashi Ito, Yasuhiro Iwaki, Akira Hirako, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We studied photoelectrochemical properties of Alx Ga1-x N for the first time, and compared with those of Iny Ga1-y N. The conduction band-edge energy of n-type Alx Ga1-x N decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from dynamic photocurrent-voltage measurements under illumination also decreased with increasing Al composition. Greater Al composition also shifted the onset voltage to more negative direction. These phenomena can be explained by the changes of bandgap and band-edge energies with Al composition.

Original language	English (US)
Pages (from-to)	B175-B179
Journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume	154
Issue number	2
DOIs	https://doi.org/10.1149/1.2402104
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2402104

Cite this

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abstract = "We studied photoelectrochemical properties of Alx Ga1-x N for the first time, and compared with those of Iny Ga1-y N. The conduction band-edge energy of n-type Alx Ga1-x N decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from dynamic photocurrent-voltage measurements under illumination also decreased with increasing Al composition. Greater Al composition also shifted the onset voltage to more negative direction. These phenomena can be explained by the changes of bandgap and band-edge energies with Al composition.",

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AU - Fujii, Katsushi

AU - Ono, Masato

AU - Ito, Takashi

AU - Iwaki, Yasuhiro

AU - Hirako, Akira

AU - Ohkawa, Kazuhiro

PY - 2007

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AB - We studied photoelectrochemical properties of Alx Ga1-x N for the first time, and compared with those of Iny Ga1-y N. The conduction band-edge energy of n-type Alx Ga1-x N decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from dynamic photocurrent-voltage measurements under illumination also decreased with increasing Al composition. Greater Al composition also shifted the onset voltage to more negative direction. These phenomena can be explained by the changes of bandgap and band-edge energies with Al composition.

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