TY - JOUR
T1 - Band gap tunning in BN-doped graphene systems with high carrier mobility
AU - Kaloni, Thaneshwor P.
AU - Joshi, R. P.
AU - Adhikari, N. P.
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2014/2/17
Y1 - 2014/2/17
N2 - Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.
AB - Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.
UR - http://hdl.handle.net/10754/552143
UR - http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866383
UR - http://www.scopus.com/inward/record.url?scp=84897433353&partnerID=8YFLogxK
U2 - 10.1063/1.4866383
DO - 10.1063/1.4866383
M3 - Article
SN - 0003-6951
VL - 104
SP - 073116
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 7
ER -