@inproceedings{08a627b4ee754f16856bf8ba39464400,
title = "Band structure calculation of dilute-As GaNAs by first principle",
abstract = "We present the band structure calculation of dilute-As GaNAs alloys (from 0% to 6.25% As) by employing the densityfunctional theory that adopts the local density approximation. Our studies indicate that the GaNAs shows a direct bandgap property. A small incorporation of As into the GaN alloy leads to the a significant decrease in the energy gap, which allows direct band gap transition covering from 3.47 eV (0% As) down to 1.93eV (6.25% As). The finding implies the dilute-As GaNAs alloy as an excellent candidate for the active material for optoelectronics that covers the entire visible spectral regime. The carrier effective masses of dilute-As GaNAs alloys are also presented.",
keywords = "Dilute-As GaNAs, Effective mass, First principle, Visible spectrum",
author = "Li, {Xiao Hang} and Hua Tong and Hongping Zhao and Nelson Tansu",
year = "2010",
doi = "10.1117/12.842931",
language = "English (US)",
isbn = "9780819479938",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Physics and Simulation of Optoelectronic Devices XVIII",
note = "Physics and Simulation of Optoelectronic Devices XVIII ; Conference date: 25-01-2010 Through 28-01-2010",
}