bandgap-engineered broadband stimulated emission in semiconductor quantum dash interband laser

C. L. Tan; H. S. Djie; C. E. Dimas; V. Hongpingyo; Y. H. Ding; B. S. Ooi

doi:10.1109/IPGC.2008.4781321

bandgap-engineered broadband stimulated emission in semiconductor quantum dash interband laser

C. L. Tan, H. S. Djie, C. E. Dimas, V. Hongpingyo, Y. H. Ding, B. S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of ∼1.57 μm. Despite the bandgap blue-shift of ∼70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the asgrown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.

Original language	English (US)
Title of host publication	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs	https://doi.org/10.1109/IPGC.2008.4781321
State	Published - 2008
Externally published	Yes
Event	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore Duration: Dec 8 2008 → Dec 11 2008

Publication series

Name	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Other

Other	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
Country/Territory	Singapore
City	Singapore
Period	12/8/08 → 12/11/08

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/IPGC.2008.4781321

Cite this

@inproceedings{1a110a78ba18438cb435fdc207600eca,

title = "bandgap-engineered broadband stimulated emission in semiconductor quantum dash interband laser",

abstract = "Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of ∼1.57 μm. Despite the bandgap blue-shift of ∼70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the asgrown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.",

author = "Tan, {C. L.} and Djie, {H. S.} and Dimas, {C. E.} and V. Hongpingyo and Ding, {Y. H.} and Ooi, {B. S.}",

year = "2008",

doi = "10.1109/IPGC.2008.4781321",

language = "English (US)",

isbn = "9781424429059",

series = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008",

booktitle = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008",

note = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 ; Conference date: 08-12-2008 Through 11-12-2008",

}

Tan, CL, Djie, HS, Dimas, CE, Hongpingyo, V, Ding, YH & Ooi, BS 2008, bandgap-engineered broadband stimulated emission in semiconductor quantum dash interband laser. in 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008., 4781321, 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008, 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008, Singapore, Singapore, 12/8/08. https://doi.org/10.1109/IPGC.2008.4781321

TY - GEN

T1 - bandgap-engineered broadband stimulated emission in semiconductor quantum dash interband laser

AU - Tan, C. L.

AU - Djie, H. S.

AU - Dimas, C. E.

AU - Hongpingyo, V.

AU - Ding, Y. H.

AU - Ooi, B. S.

PY - 2008

Y1 - 2008

N2 - Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of ∼1.57 μm. Despite the bandgap blue-shift of ∼70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the asgrown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.

AB - Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of ∼1.57 μm. Despite the bandgap blue-shift of ∼70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the asgrown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.

UR - http://www.scopus.com/inward/record.url?scp=67649651806&partnerID=8YFLogxK

U2 - 10.1109/IPGC.2008.4781321

DO - 10.1109/IPGC.2008.4781321

M3 - Conference contribution

AN - SCOPUS:67649651806

SN - 9781424429059

T3 - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

BT - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

T2 - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Y2 - 8 December 2008 through 11 December 2008

ER -

bandgap-engineered broadband stimulated emission in semiconductor quantum dash interband laser

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