Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: A surface photovoltage spectroscopy study

Ts Ivanov; V. Donchev; K. Bachev; Y. H. Ding; Y. Wang; H. S. Djie; B. S. Ooi

doi:10.1088/1742-6596/113/1/012033

Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: A surface photovoltage spectroscopy study

Ts Ivanov, V. Donchev, K. Bachev, Y. H. Ding, Y. Wang, H. S. Djie, B. S. Ooi

Research output: Contribution to journal › Article › peer-review

Abstract

Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal annealing at 700°C in nitrogen ambient. The effect of group-III intermixing to the interband optical transition energies in the structures is revealed by SPV spectroscopy and the results are confirmed by photoluminescence measurements. A differential bandgap blueshift as large as 93 meV (176 nm) is observed in the intermixed sample compared to the as grown one. The SPV investigation confirms that this intermixing technique is a powerful tool for achieving the required wavelength of 1.55 μm for telecommunication applications.

Original language	English (US)
Article number	012033
Journal	Journal of Physics: Conference Series
Volume	113
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/113/1/012033
State	Published - May 1 2008
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/113/1/012033

Cite this

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title = "Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: A surface photovoltage spectroscopy study",

abstract = "Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal annealing at 700°C in nitrogen ambient. The effect of group-III intermixing to the interband optical transition energies in the structures is revealed by SPV spectroscopy and the results are confirmed by photoluminescence measurements. A differential bandgap blueshift as large as 93 meV (176 nm) is observed in the intermixed sample compared to the as grown one. The SPV investigation confirms that this intermixing technique is a powerful tool for achieving the required wavelength of 1.55 μm for telecommunication applications.",

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T1 - Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures

T2 - A surface photovoltage spectroscopy study

AU - Ivanov, Ts

AU - Donchev, V.

AU - Bachev, K.

AU - Ding, Y. H.

AU - Wang, Y.

AU - Djie, H. S.

AU - Ooi, B. S.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal annealing at 700°C in nitrogen ambient. The effect of group-III intermixing to the interband optical transition energies in the structures is revealed by SPV spectroscopy and the results are confirmed by photoluminescence measurements. A differential bandgap blueshift as large as 93 meV (176 nm) is observed in the intermixed sample compared to the as grown one. The SPV investigation confirms that this intermixing technique is a powerful tool for achieving the required wavelength of 1.55 μm for telecommunication applications.

AB - Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal annealing at 700°C in nitrogen ambient. The effect of group-III intermixing to the interband optical transition energies in the structures is revealed by SPV spectroscopy and the results are confirmed by photoluminescence measurements. A differential bandgap blueshift as large as 93 meV (176 nm) is observed in the intermixed sample compared to the as grown one. The SPV investigation confirms that this intermixing technique is a powerful tool for achieving the required wavelength of 1.55 μm for telecommunication applications.

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Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: A surface photovoltage spectroscopy study

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