Beating of magnetic oscillations in a graphene device probed by quantum capacitance

Muhammad Tahir; Udo Schwingenschlögl

doi:10.1063/1.4732796

Beating of magnetic oscillations in a graphene device probed by quantum capacitance

Muhammad Tahir, Udo Schwingenschlögl

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.

Original language	English (US)
Pages (from-to)	013114
Journal	Applied Physics Letters
Volume	101
Issue number	1
DOIs	https://doi.org/10.1063/1.4732796
State	Published - Jul 6 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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https://repository.kaust.edu.sa/bitstream/10754/314510/1/Beating%20of%20magnetic%20oscillations%20in%20a%20graphene%20device%20probed%20by%20quantum%20capacitance.pdf

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abstract = "We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.",

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AU - Schwingenschlögl, Udo

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Y1 - 2012/7/6

N2 - We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.

AB - We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.

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Beating of magnetic oscillations in a graphene device probed by quantum capacitance

Abstract

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