Bias Stability of Solution-Processed In2O3 Thin Film Transistors

Isam Abdullah, J Emyr Macdonald, Yen-Hung Lin, Thomas D. Anthopoulos, Nasih Hma Salahr, Shaida Anwer Kakil, Fahmi Fariq Muhammedsharif

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In2O3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.
Original languageEnglish (US)
JournalJournal of Physics: Materials
StatePublished - Oct 29 2020


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