Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics

Florian Colléaux, James M. Ball, Paul H. Wöbkenberg, Peter J. Hotchkiss, Seth R. Marder, Thomas D. Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


The electrical stability of low-voltage organic transistors based on phosphonic acid self-assembled monolayer (SAM) dielectrics is investigated using four different semiconductors. The threshold voltage shift in these devices shows a stretched-exponential time dependence under continuous gate bias with a relaxation time in the range of 10 3-10 5 s, at room temperature. Differences in the bias instability of transistors based on different self-assembled monolayers and organic semiconductors suggest that charge trapping into localized states in the semiconductor is not the only mechanism responsible for the observed instability. By applying 1-5 s long programming voltage pulses of 2-3 V in amplitude, a large reversible threshold voltage shift can be produced. The retention time of the programmed state was measured to be on the order of 30 h. The combination of low voltage operation and relatively long retention times makes these devices interesting for ultra-low power memory applications.

Original languageEnglish (US)
Pages (from-to)14387-14393
Number of pages7
JournalPhysical Chemistry Chemical Physics
Issue number32
StatePublished - Aug 28 2011
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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