Bilayer HfO2/Sb2O3 gate dielectric stacks for transistors with 2D semiconducting channels

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish (US)
Pages (from-to)2684-2686
Number of pages3
JournalScience Bulletin
Volume68
Issue number22
DOIs
StatePublished - Nov 30 2023

ASJC Scopus subject areas

  • General

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