TY - JOUR
T1 - Bistetracene Thin Film Polymorphic Control to Unravel the Effect of Molecular Packing on Charge Transport
AU - Burnett, Edmund K.
AU - Ly, Jack
AU - Niazi, Muhammad R.
AU - Zhang, Lei
AU - McCuskey, Samantha R.
AU - Amassian, Aram
AU - Smilgies, Detlef M.
AU - Mannsfeld, Stefan C.B.
AU - Briseno, Alejandro L.
N1 - Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/5/9
Y1 - 2018/5/9
N2 - Polymorphism, the ability for a given material to adopt multiple crystalline packing states, is a powerful approach for investigating how changes in molecular packing influence charge transport within organic semiconductors. In this study, a new “thin film” polymorph of the high-performance, p-type small molecule N-octyldiisopropylsilyl acetylene bistetracene (BT) is isolated and characterized. Structural changes in the BT films are monitored using static and in situ grazing-incidence X-ray diffraction. The diffraction data, combined with simulation and crystallographic refinement calculations, show the molecular packing of the “thin film” polymorph transforms from a slipped 1D π-stacking motif to a highly oriented and crystalline film upon solvent vapor annealing with a 2D brick-layer π-stacking arrangement, similar to the so-called “bulk” structure observed in single crystals. Charge transport is characterized as a function of vapor annealing, grain orientation, and temperature. Demonstrating that mobility increases by three orders of magnitude upon solvent vapor annealing and displays a differing temperature-dependent mobility behavior.
AB - Polymorphism, the ability for a given material to adopt multiple crystalline packing states, is a powerful approach for investigating how changes in molecular packing influence charge transport within organic semiconductors. In this study, a new “thin film” polymorph of the high-performance, p-type small molecule N-octyldiisopropylsilyl acetylene bistetracene (BT) is isolated and characterized. Structural changes in the BT films are monitored using static and in situ grazing-incidence X-ray diffraction. The diffraction data, combined with simulation and crystallographic refinement calculations, show the molecular packing of the “thin film” polymorph transforms from a slipped 1D π-stacking motif to a highly oriented and crystalline film upon solvent vapor annealing with a 2D brick-layer π-stacking arrangement, similar to the so-called “bulk” structure observed in single crystals. Charge transport is characterized as a function of vapor annealing, grain orientation, and temperature. Demonstrating that mobility increases by three orders of magnitude upon solvent vapor annealing and displays a differing temperature-dependent mobility behavior.
KW - bistetracene
KW - organic semiconductors
KW - polymorphism
KW - solvent vapor annealing
UR - http://www.scopus.com/inward/record.url?scp=85042459764&partnerID=8YFLogxK
U2 - 10.1002/admi.201701607
DO - 10.1002/admi.201701607
M3 - Article
AN - SCOPUS:85042459764
SN - 2196-7350
VL - 5
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 9
M1 - 1701607
ER -