TY - JOUR
T1 - BiVO4 {010} and {110} Relative Exposure Extent
T2 - Governing Factor of Surface Charge Population and Photocatalytic Activity
AU - Tan, Hui Ling
AU - Wen, Xiaoming
AU - Amal, Rose
AU - Ng, Yun Hau
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/4/21
Y1 - 2016/4/21
N2 - The {010} and {110} crystal facets of monoclinic bismuth vanadate (m-BiVO4) has been demonstrated to be the active reduction and oxidation sites, respectively. Here, we show using dual-faceted m-BiVO4 with distinctly different dominant exposed facets, one which is {010}-dominant and the other {110}-dominant, contrary to prediction, the former m-BiVO4 exhibits superior photooxidation activities. The population of photogenerated electrons and holes on the surface are revealed to be proportional to the respective surface areas of {010} and {110} exposed on m-BiVO4, as evidenced by steady-state photoluminescence (PL) measurements in the presence of charge scavengers. The better photoactivity of {010}-dominant m-BiVO4 is attributed to prompt electron transfer facilitated by the presence of more photogenerated electrons on the larger {010} surface. Additionally, the greater extent of electron trapping in {110}-dominant m-BiVO4 also deteriorates its photoactivity by inducing electron-hole pair recombination.
AB - The {010} and {110} crystal facets of monoclinic bismuth vanadate (m-BiVO4) has been demonstrated to be the active reduction and oxidation sites, respectively. Here, we show using dual-faceted m-BiVO4 with distinctly different dominant exposed facets, one which is {010}-dominant and the other {110}-dominant, contrary to prediction, the former m-BiVO4 exhibits superior photooxidation activities. The population of photogenerated electrons and holes on the surface are revealed to be proportional to the respective surface areas of {010} and {110} exposed on m-BiVO4, as evidenced by steady-state photoluminescence (PL) measurements in the presence of charge scavengers. The better photoactivity of {010}-dominant m-BiVO4 is attributed to prompt electron transfer facilitated by the presence of more photogenerated electrons on the larger {010} surface. Additionally, the greater extent of electron trapping in {110}-dominant m-BiVO4 also deteriorates its photoactivity by inducing electron-hole pair recombination.
UR - http://www.scopus.com/inward/record.url?scp=84964507826&partnerID=8YFLogxK
U2 - 10.1021/acs.jpclett.6b00428
DO - 10.1021/acs.jpclett.6b00428
M3 - Article
AN - SCOPUS:84964507826
SN - 1948-7185
VL - 7
SP - 1400
EP - 1405
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 7
ER -