Abstract
Fabrication of homoepitaxial ZnSe p-n junction LEDs has been succeeded for the first time. Molecular-beam epitaxial growth of the homoepitaxial p-n layers has been performed on a dry-etched ZnSe substrate. The p-n junction consists of a N-doped ZnSe layer formed by active nitrogen doping and a Cl-doped ZnSe layer. The homoepitaxial ZnSe p-n junction LEDs have emitted pure blue light at room temperature. The peak energy of the blue electroluminescence was 2.67 eV with a narrow full width at half maximum of 49 meV.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference on Solid State Devices and Materials |
| Publisher | Publ by Business Cent for Acad Soc Japan |
| Pages | 704-706 |
| Number of pages | 3 |
| State | Published - 1991 |
| Externally published | Yes |
| Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: Aug 27 1991 → Aug 29 1991 |
Other
| Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
|---|---|
| City | Yokohama, Jpn |
| Period | 08/27/91 → 08/29/91 |
ASJC Scopus subject areas
- Engineering(all)