Bottom electrodes for integrated Pb(Zr,Ti)O3 films

Philip D. Hren; S. H. Rou; H. N. Al-Shareef; M. S. Ameen; O. Auciello; A. I. Kingon

doi:10.1080/10584589208215751

Bottom electrodes for integrated Pb(Zr,Ti)O₃ films

Philip D. Hren, S. H. Rou, H. N. Al-Shareef, M. S. Ameen, O. Auciello, A. I. Kingon

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Lower electrodes for Pb(Zr,Ti)O3 (PZT) used in ferroelectric random access memories must have good electrical conductivity and must interact as little as possible with the PZT film. We have evaluated a number of bottom electrodes for use with PZT films deposited by ion beam sputter deposition These electrodes include Pt, Pt/Ti, RuO2, ReOP3, and C0Si2/Si3N4, all on SiO2/Si; and TiN and Pt on MgO. Films were studied by XTEM, Auger depth profiling, X-ray microanalysis, and XRD. Important issues for platinum include: a) microstructure (porous for magnetron sputtered Pt); b) rapid lead diffusion through porous Pt; c) adhesion (improved by raising deposition temperature or by adding a titanium layer); and d) hillock formation (related to compressive stress in platinum). RuO2 has good conductivity and has no apparent interfacial layer with PZT. Each of the remaining substrates has drawbacks: CoSi2 forms a surface oxide; ReO3 has poor phase stability; TiN oxidizes and loses conductivity.

Original language	English (US)
Pages (from-to)	311-325
Number of pages	15
Journal	Integrated Ferroelectrics
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589208215751
State	Published - Nov 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589208215751

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title = "Bottom electrodes for integrated Pb(Zr,Ti)O3 films",

abstract = "Lower electrodes for Pb(Zr,Ti)O3 (PZT) used in ferroelectric random access memories must have good electrical conductivity and must interact as little as possible with the PZT film. We have evaluated a number of bottom electrodes for use with PZT films deposited by ion beam sputter deposition These electrodes include Pt, Pt/Ti, RuO2, ReOP3, and C0Si2/Si3N4, all on SiO2/Si; and TiN and Pt on MgO. Films were studied by XTEM, Auger depth profiling, X-ray microanalysis, and XRD. Important issues for platinum include: a) microstructure (porous for magnetron sputtered Pt); b) rapid lead diffusion through porous Pt; c) adhesion (improved by raising deposition temperature or by adding a titanium layer); and d) hillock formation (related to compressive stress in platinum). RuO2 has good conductivity and has no apparent interfacial layer with PZT. Each of the remaining substrates has drawbacks: CoSi2 forms a surface oxide; ReO3 has poor phase stability; TiN oxidizes and loses conductivity.",

author = "Hren, {Philip D.} and Rou, {S. H.} and Al-Shareef, {H. N.} and Ameen, {M. S.} and O. Auciello and Kingon, {A. I.}",

year = "1992",

month = nov,

doi = "10.1080/10584589208215751",

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T1 - Bottom electrodes for integrated Pb(Zr,Ti)O3 films

AU - Hren, Philip D.

AU - Rou, S. H.

AU - Al-Shareef, H. N.

AU - Ameen, M. S.

AU - Auciello, O.

AU - Kingon, A. I.

PY - 1992/11

Y1 - 1992/11

N2 - Lower electrodes for Pb(Zr,Ti)O3 (PZT) used in ferroelectric random access memories must have good electrical conductivity and must interact as little as possible with the PZT film. We have evaluated a number of bottom electrodes for use with PZT films deposited by ion beam sputter deposition These electrodes include Pt, Pt/Ti, RuO2, ReOP3, and C0Si2/Si3N4, all on SiO2/Si; and TiN and Pt on MgO. Films were studied by XTEM, Auger depth profiling, X-ray microanalysis, and XRD. Important issues for platinum include: a) microstructure (porous for magnetron sputtered Pt); b) rapid lead diffusion through porous Pt; c) adhesion (improved by raising deposition temperature or by adding a titanium layer); and d) hillock formation (related to compressive stress in platinum). RuO2 has good conductivity and has no apparent interfacial layer with PZT. Each of the remaining substrates has drawbacks: CoSi2 forms a surface oxide; ReO3 has poor phase stability; TiN oxidizes and loses conductivity.

AB - Lower electrodes for Pb(Zr,Ti)O3 (PZT) used in ferroelectric random access memories must have good electrical conductivity and must interact as little as possible with the PZT film. We have evaluated a number of bottom electrodes for use with PZT films deposited by ion beam sputter deposition These electrodes include Pt, Pt/Ti, RuO2, ReOP3, and C0Si2/Si3N4, all on SiO2/Si; and TiN and Pt on MgO. Films were studied by XTEM, Auger depth profiling, X-ray microanalysis, and XRD. Important issues for platinum include: a) microstructure (porous for magnetron sputtered Pt); b) rapid lead diffusion through porous Pt; c) adhesion (improved by raising deposition temperature or by adding a titanium layer); and d) hillock formation (related to compressive stress in platinum). RuO2 has good conductivity and has no apparent interfacial layer with PZT. Each of the remaining substrates has drawbacks: CoSi2 forms a surface oxide; ReO3 has poor phase stability; TiN oxidizes and loses conductivity.

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Bottom electrodes for integrated Pb(Zr,Ti)O₃ films

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