Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus; Chien Chia Chen; Ming Jui Lee; Hsueh Hsing Liu; Jen Inn Chyi; Michael R S Huang; Chuan Pu Liu; Tzu Chiao Wei; Jr-Hau He; Kun Yu Lai

doi:10.1002/adma.201501538

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus, Chien Chia Chen, Ming Jui Lee, Hsueh Hsing Liu, Jen Inn Chyi, Michael R S Huang, Chuan Pu Liu, Tzu Chiao Wei, Jr-Hau He, Kun Yu Lai

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	4845-4850
Number of pages	6
Journal	Advanced Materials
Volume	27
Issue number	33
DOIs	https://doi.org/10.1002/adma.201501538
State	Published - Jul 15 2015

Access to Document

10.1002/adma.201501538

Cite this

@article{92768fe98b734c32b7bcd2476756295c,

title = "Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si",

abstract = "Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Hus, {Jui Wei} and Chen, {Chien Chia} and Lee, {Ming Jui} and Liu, {Hsueh Hsing} and Chyi, {Jen Inn} and Huang, {Michael R S} and Liu, {Chuan Pu} and Wei, {Tzu Chiao} and Jr-Hau He and Lai, {Kun Yu}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2015",

month = jul,

day = "15",

doi = "10.1002/adma.201501538",

language = "English (US)",

volume = "27",

pages = "4845--4850",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley",

number = "33",

}

TY - JOUR

T1 - Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

AU - Hus, Jui Wei

AU - Chen, Chien Chia

AU - Lee, Ming Jui

AU - Liu, Hsueh Hsing

AU - Chyi, Jen Inn

AU - Huang, Michael R S

AU - Liu, Chuan Pu

AU - Wei, Tzu Chiao

AU - He, Jr-Hau

AU - Lai, Kun Yu

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/7/15

Y1 - 2015/7/15

N2 - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - http://hdl.handle.net/10754/594200

UR - http://doi.wiley.com/10.1002/adma.201501538

UR - http://www.scopus.com/inward/record.url?scp=84940707308&partnerID=8YFLogxK

U2 - 10.1002/adma.201501538

DO - 10.1002/adma.201501538

M3 - Article

C2 - 26178685

SN - 0935-9648

VL - 27

SP - 4845

EP - 4850

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Abstract

Access to Document

Other files and links

Fingerprint

Cite this