@inproceedings{3d25a517484049288ffd4f72f9bcfbac,
title = "Broadband emission in InAs/InGaAlAs quantum-dash-in-well laser",
abstract = "We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for broadband diode laser and amplifier. Characterizations of this material system have been performed using spectroscopy and microscopy techniques. Gain-guided broad area laser fabricated using this material system exhibits lasing wavelength coverage of up to 76 nm at ∼1.64 μm center wavelength from simultaneous multiple confined states lasing at room temperature.",
keywords = "Broadband emission, Quantum dash, Quantum dot, Semiconductor laser",
author = "Ooi, {Boon S.} and Djie, {Hery S.} and Helmy, {Amr S.} and Hwang, {James C.M.}",
year = "2008",
doi = "10.4028/0-87849-471-5.173",
language = "English (US)",
isbn = "0878494715",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications",
pages = "173--175",
booktitle = "Semiconductor Photonics",
note = "International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference date: 01-07-2007 Through 06-07-2007",
}